Power MOSFET HXY MOSFET AOD4184A HXY N Channel Enhancement Mode with 40V Drain Source Voltage Rating
Key Attributes
Model Number:
AOD4184A-HXY
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
64.6W
Mfr. Part #:
AOD4184A-HXY
Package:
TO-252-2L
Product Description
Product Overview
The AOD4184A is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications.
Product Attributes
- Brand: HXY
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Website: www.hxymos.com
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings (TC=25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 60 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 45 | A | |||
| IDM | Pulsed Drain Current2 | 220 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 416.1 | mJ | |||
| IAS | Avalanche Current | 39 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 64.6 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-ambient (Steady State)1 | 62 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 2.8 | /W | |||
| Electrical Characteristics (TC=25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 40 | 45 | V | |
| IDSS | Zero Gate Voltage Drain Current | VDS=40V,VGS=0V | 1 | A | ||
| IGSS | Gate-Body Leakage Current | VGS=20V,VDS=0V | 100 | nA | ||
| On Characteristics (Note 3) | ||||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS,ID=250A | 1.2 | 1.6 | 2.0 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=20A | 7.0 | 8.5 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=20A | 15 | 18 | m | |
| gFS | Forward Transconductance | VDS=10V,ID=20A | 15 | S | ||
| Dynamic Characteristics (Note4) | ||||||
| Clss | Input Capacitance | VDS=20V,VGS=0V, F=1.0MHz | 1800 | PF | ||
| Coss | Output Capacitance | 280 | PF | |||
| Crss | Reverse Transfer Capacitance | 190 | PF | |||
| Switching Characteristics (Note 4) | ||||||
| td(on) | Turn-on Delay Time | VDD=20V,ID=2A,RL=1 VGS=10V,RG=3 | 6.4 | nS | ||
| tr | Turn-on Rise Time | 17.2 | nS | |||
| td(off) | Turn-Off Delay Time | 29.6 | nS | |||
| tf | Turn-Off Fall Time | 16.8 | nS | |||
| Total Gate Charge | ||||||
| Qg | Total Gate Charge | VDS=20V,ID=20A, VGS=10V | 29 | nC | ||
| Qgs | Gate-Source Charge | 4.5 | nC | |||
| Qgd | Gate-Drain Charge | 6.4 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | VGS=0V,IS=10A | 1.2 | V | ||
| IS | Diode Forward Current | 2 | 68 | A | ||
| trr | Reverse Recovery Time | TJ = 25C, IF = 20A di/dt = 100A/s(Note3) | 29 | nS | ||
| Qrr | Reverse Recovery Charge | 26 | nC | |||
| ton | Forward Turn-On Time | Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) | ||||
2509181722_HXY-MOSFET-AOD4184A-HXY_C22367195.pdf
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