HXY MOSFET AO4828 HXY Dual N Channel MOSFET Featuring Low On State Resistance and High Drain Current
Key Attributes
Model Number:
AO4828-HXY
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
6.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
36mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
116pF
Number:
2 N-Channel
Pd - Power Dissipation:
2.1W
Input Capacitance(Ciss):
1.92nF@25V
Gate Charge(Qg):
50nC@30V
Mfr. Part #:
AO4828-HXY
Package:
SOP-8
Product Description
Product Overview
The AO4828-HXY is a Dual N-Channel Enhancement Mode MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. It utilizes advanced trench technology to offer excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG HXY
- Origin: Shenzhen, China
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Features | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Drain Current | ID | @TA=25, VGS @ 4.5V | 6.5 | A | ||
| Drain Current | ID | @TA=70, VGS @ 4.5V | 5 | A | ||
| On-State Resistance | RDS(ON) | VGS=10 V, ID=6A | 32 | 36 | m | |
| On-State Resistance | RDS(ON) | VGS=4.5V, ID=4A | 34 | 48 | m | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current, VGS @ 4.5V | ID@TA=25 | 6.5 | A | |||
| Drain Current, VGS @ 4.5V | ID@TA=70 | 5 | A | |||
| Pulsed Drain Current | IDM | 30 | A | |||
| Total Power Dissipation | PD@TA=25 | 2.1 | W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 60 | /W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | 69 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1.0 | 1.4 | 2.0 | V |
| Forward Transconductance | gFS | VDS=5V,ID=6A | 20 | - | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | 1920 | - | PF | ||
| Output Capacitance | Coss | 155 | - | PF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, F=1.0MHz | 116 | - | PF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | - | 8 | - | nS | |
| Turn-on Rise Time | tr | - | 5 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 29 | - | nS | |
| Turn-Off Fall Time | tf | VDS=30V, RL=4.7, VGS=10V,RGEN=3 | - | 6 | - | nS |
| Total Gate Charge | Qg | - | 50 | - | nC | |
| Gate-Source Charge | Qgs | - | 8 | - | nC | |
| Gate-Drain Charge | Qg | VDS=30V,ID=6A, VGS=10V | - | 16 | - | nC |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=6A | - | - | 1.2 | V |
| Diode Forward Current | IS | - | - | 7 | A | |
| Reverse Recovery Time | trr | - | 35 | - | nS | |
| Reverse Recovery Charge | Qrr | TJ = 25C, IF =7A, di/dt = 100A/s | - | 43 | - | nC |
2509181601_HXY-MOSFET-AO4828-HXY_C4748735.pdf
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