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quality 650V GaN on Silicon Power Transistor HXY MOSFET HIGLD60R190D1 with RoHS Pb Free and REACH Compliance factory
quality 650V GaN on Silicon Power Transistor HXY MOSFET HIGLD60R190D1 with RoHS Pb Free and REACH Compliance factory

650V GaN on Silicon Power Transistor HXY MOSFET HIGLD60R190D1 with RoHS Pb Free and REACH Compliance

Key Attributes
Model Number: HIGLD60R190D1
Product Custom Attributes
Drain To Source Voltage:
-
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-
RDS(on):
160mΩ@6V
Gate Threshold Voltage (Vgs(th)):
1.6V
Type:
1 N-channel
Reverse Transfer Capacitance (Crss@Vds):
-
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
75W
Gate Charge(Qg):
-
Mfr. Part #:
HIGLD60R190D1
Package:
DFN-8(8x8)
Product Description

HIGLD60R190D1 650V GaN-on-Silicon Enhancement-mode Power Transistor

The HIGLD60R190D1 is a 650V GaN-on-Silicon enhancement-mode power transistor in an 8mm x 8mm Dual Flat No-lead (DFN) package. Designed as a normally-OFF power switch, it offers ultra-high switching frequency, no reverse-recovery charge, and low gate/output charge. This transistor is qualified for industrial applications according to JEDEC Standards and features ESD safeguard. It is RoHS, Pb-free, and REACH-compliant. Key applications include AC-DC converters, DC-DC converters, Totem pole PFC, fast battery charging, high-density power conversion, and high-efficiency power conversion.

Product Attributes

  • Brand: HUAXUANYANG ELECTRONICS CO.,LTD
  • Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
  • Material: GaN-on-Silicon
  • Certifications: RoHS, Pb-free, REACH-compliant

Technical Specifications

ParametersSymbolsValuesUnitsNotes/Test Conditions
Drain-source voltage, maxVDS, max-650VVGS = 0 V, ID = 10 A
Drain-source voltage transientVDS, transient-750VVGS = 0 V, VDS = 750 V, tPulse < 1 s
Continuous current, drain-sourceID-10ATc = 25 oC
Pulsed current, drain-sourceID, pulse-18ATc = 25 oC; VG = 6 V; Pulse width = 10 s
Pulsed current, drain-sourceID, pulse-10ATc = 125 oC; VG = 6 V; Pulse width = 10 s
Gate-source voltage, continuousVGS-1.4+7VTj = -55 oC to 150 oC
Gate-source voltage, pulsedVGS, pulse-+10VTj = -55 oC to 150 oC; tPulse = 50 ns, f = 100 kHz; open drain
Power dissipationPtot-75WTc = 25 oC
Operating temperatureTj-55+150oC
Storage temperatureTstg-55+150oC
Thermal resistance, junction-caseRthJC-1.65oC/W
Reflow soldering temperatureTsold-260oCMSL3
Gate threshold voltageVGS(TH)1.22.5VID = 11 mA; VDS = VGS; Tj = 25 oC
Gate threshold voltageVGS(TH)-1.6-ID = 11 mA; VDS = VGS; Tj = 125 oC
Drain-source leakage currentIDSS-0.420AVDS = 650 V; VGS = 0 V; Tj = 25 oC
Drain-source leakage currentIDSS-4-VDS = 650 V; VGS = 0 V; Tj = 125 oC
Gate-source leakage currentIGSS--200AVGS = 6 V; VDS = 0 V
Drain-source on-state resistanceRDS(on)-160200mVGS = 6 V; ID = 3 A; Tj = 25 oC
Drain-source on-state resistanceRDS(on)-330-mVGS = 6 V; ID = 3 A; Tj = 125 oC
Gate resistanceRG-3.5-f = 5 MHz; open drain
Input capacitanceCiss-83-pFVGS = 0 V; VDS = 400 V; f = 100 kHz
Output capacitanceCoss-27-pFVGS = 0 V; VDS = 400 V; f = 100 kHz
Reverse transfer capacitanceCrss-0.4-pFVGS = 0 V; VDS = 400 V; f = 100 kHz
Effective output capacitance, energy relatedCo(er)-35-pFVGS = 0 V; VDS = 0 to 400 V
Effective output capacitance, time relatedCo(tr)-54-pFVGS = 0 V; VDS = 0 to 400 V
Output chargeQOSS-22-nCVGS = 0 V; VDS = 0 to 400 V
Turn-on delay timetd(on)-2-nsVDS = 400 V; ID = 6 A; L = 318 H; VGS = 6 V; Ron = 10 ; Roff = 2
Turn-off delay timetd(off)-4-nsVDS = 400 V; ID = 6 A; L = 318 H; VGS = 6 V; Ron = 10 ; Roff = 2
Rise timetr-5-nsVDS = 400 V; ID = 6 A; L = 318 H; VGS = 6 V; Ron = 10 ; Roff = 2
Fall timetf-6-nsVDS = 400 V; ID = 6 A; L = 318 H; VGS = 6 V; Ron = 10 ; Roff = 2
Gate chargeQG-2.3-nCVGS = 0 to 6 V; VDS = 400 V; ID = 3 A
Gate-source chargeQGS-0.2-nCVDS = 400 V; ID = 3 A
Gate-drain chargeQGD-0.9-nCVDS = 400 V; ID = 3 A
Gate plateau voltageVPlat-2.4-VVDS = 400 V; ID = 3 A
Source-drain reverse voltageVSD-2.5-VVGS = 0 V; ISD = 3 A
Pulsed current, reverseIS, pulse-20-AVGS = 6 V
Reverse recovery chargeQrr-0-nCISD = 3 A; VDS = 400 V
Reverse recovery timetrr-0-nsISD = 3 A; VDS = 400 V
Peak reverse recovery currentIrrm-0-AISD = 3 A; VDS = 400 V

2509181546_HXY-MOSFET-HIGLD60R190D1_C41426365.pdf

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