1700V SiC N Channel MOSFET HXY MOSFET HSCT20N170 with RoHS Compliance and Halogen Free Construction
Key Attributes
Model Number:
HSCT20N170
Product Custom Attributes
Drain To Source Voltage:
1.7kV
Current - Continuous Drain(Id):
72A
Operating Temperature -:
-40℃~+150℃
RDS(on):
70mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
6.7pF
Input Capacitance(Ciss):
3.672nF
Pd - Power Dissipation:
520W
Output Capacitance(Coss):
171pF
Gate Charge(Qg):
188nC
Mfr. Part #:
HSCT20N170
Package:
TO-247-3L
Product Description
Product Overview
The HSCT20N170 is a SiC Power MOSFET, N-Channel Enhancement Mode device from HUAXUANYANG ELECTRONICS CO.,LTD. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive. Its resistance to latch-up and halogen-free, RoHS compliant nature contribute to higher system efficiency, reduced cooling requirements, increased power density, and higher system switching frequency. This makes it suitable for applications such as solar inverters, switch mode power supplies, high voltage DC/DC converters, motor drives, and pulsed power applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Part Number: HSCT20N170
- Material: SiC (Silicon Carbide)
- Type: N-Channel Enhancement Mode
- Certifications: Halogen Free, RoHS Compliant
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Website: www.hxymos.com
- Package: TO-247
Technical Specifications
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| VDSmax | Drain - Source Voltage | 1700 | V | VGS = 0 V, ID = 100 A | |
| VGSmax | Gate - Source Voltage | -10/+25 | V | Absolute maximum values, AC (f >1 Hz) | |
| VGSop | Gate - Source Voltage | -5/+20 | V | Recommended operational values | |
| ID | Continuous Drain Current | 72 | A | VGS =20 V, TC = 25C | Fig. 19 |
| ID | Continuous Drain Current | 48 | A | VGS =20 V, TC = 100C | |
| ID(pulse) | Pulsed Drain Current | 160 | A | Pulse width tP limited by Tjmax | Fig. 22 |
| PD | Power Dissipation | 520 | W | TC=25C, TJ = 150 C | Fig. 20 |
| TJ , Tstg | Operating Junction and Storage Temperature | -40 to +150 | C | ||
| TL | Solder Temperature | 260 | C | 1.6mm (0.063) from case for 10s | |
| Md | Mounting Torque | 1.8 | 8.8 Nm lbf-in | M3 or 6-32 screw | |
| V(BR)DSS | Drain-Source Breakdown Voltage | 1700 | V | VGS = 0 V, ID = 100 A | |
| VGS(th) | Gate Threshold Voltage | 2.0 / 2.6 / 4 | V | VDS = VGS, ID = 18mA | Fig. 11 |
| VGS(th) | Gate Threshold Voltage | 1.8 | V | VDS = VGS, ID = 18mA, TJ = 150 C | |
| IDSS | Zero Gate Voltage Drain Current | 2 / 100 | A | VDS = 1700 V, VGS = 0 V | |
| IGSS | Gate-Source Leakage Current | 600 | nA | VGS = 20 V, VDS = 0 V | |
| RDS(on) | Drain-Source On-State Resistance | 45 / 70 | m | VGS = 20 V, ID = 50 A | Fig. 4,5,6 |
| RDS(on) | Drain-Source On-State Resistance | 90 | m | VGS = 20 V, ID = 50 A, TJ = 150 C | |
| gfs | Transconductance | 21.7 / 24.4 | S | VDS= 20 V, IDS= 50 A | Fig. 7 |
| Ciss | Input Capacitance | 3672 | pF | VGS = 0 V VDS = 1000 V f = 1 MHz VAC = 25 mV | Fig. 17,18 |
| Coss | Output Capacitance | 171 | pF | ||
| Crss | Reverse Transfer Capacitance | 6.7 | pF | ||
| Eoss | Stored Energy | 105 | J | Fig. 16 | |
| EON | Turn-On Switching Energy (SiC Diode FWD) | 2.1 | mJ | VDS = 1200 V, VGS = -5/20 V, ID = 50A, RG(ext) = 2.5, L= 105 H, TJ = 150 C, using SiC Diode as FWD | Fig. 26, 29b Note 2 |
| EOFF | Turn Off Switching Energy (SiC Diode FWD) | 0.86 | mJ | ||
| EON | Turn-On Switching Energy (Body Diode FWD) | 4.7 | mJ | VDS = 1200 V, VGS = -5/20 V, ID = 50A, RG(ext) = 2.5, L= 105 H, TJ = 150 C, using MOSFET as FWD | Fig. 26, 29a Note 2 |
| EOFF | Turn Off Switching Energy (Body Diode FWD) | 0.93 | mJ | ||
| td(on) | Turn-On Delay Time | 65 | ns | VDD = 1200 V, VGS = -5/20 V ID = 50 A, RG(ext) = 2.5 , Timing relative to VDS Inductive load | Fig. 27, 29 Note 2 |
| tr | Rise Time | 20 | ns | ||
| td(off) | Turn-Off Delay Time | 48 | ns | ||
| tf | Fall Time | 18 | ns | ||
| RG(int) | Internal Gate Resistance | 1.3 | f = 1 MHz, VAC = 25 mV | ||
| Qgs | Gate to Source Charge | 44 | nC | VDS = 1200 V, VGS = -5/20 V ID = 50 A | Per IEC60747-8-4 pg 21 Fig. 12 |
| Qgd | Gate to Drain Charge | 57 | nC | ||
| Qg | Total Gate Charge | 188 | nC | ||
| VSD | Diode Forward Voltage | 4.1 / 3.6 | V | VGS = - 5 V, ISD = 25 A | Fig. 8, 9, 10 Note 1 |
| IS | Continuous Diode Forward Current | 72 | A | TC= 25 C, VGS = - 5 V | Note 1 |
| trr | Reverse Recovery Time | 70 | ns | VGS = - 5 V, ISD = 50 A , VR = 1200 V dif/dt = 1400 A/s | Note 1 |
| Qrr | Reverse Recovery Charge | 530 | nC | Note 1 | |
| Irrm | Peak Reverse Recovery Current | 14 | A | Note 1 | |
| RJC | Thermal Resistance from Junction to Case | 0.22 / 0.24 | C/W | Fig. 21 | |
| RJA | Thermal Resistance from Junction to Ambient | 40 | C/W |
2509181546_HXY-MOSFET-HSCT20N170_C42389044.pdf
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