HXY MOSFET IXYH40N120B3D1 HXY 1200V 40A IGBT Suitable for UPS EV Charger and Solar Inverter Systems
Key Attributes
Model Number:
IXYH40N120B3D1-HXY
Product Custom Attributes
Td(off):
195ns
Pd - Power Dissipation:
417W
Td(on):
48ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
35pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@250uA
Gate Charge(Qg):
170nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
375ns
Switching Energy(Eoff):
1.6mJ
Turn-On Energy (Eon):
2.65mJ
Input Capacitance(Cies):
5.047nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
161pF
Mfr. Part #:
IXYH40N120B3D1-HXY
Package:
TO-247
Product Description
Product Overview
The IXYH40N120B3D1 is a 1200V, 40A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for UPS, EV-Chargers, and Solar String Inverters.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Model: IXYH40N120B3D1
- Package: TO-247
- Packing: 30PCS
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Collector emitter voltage | VCE | @ TVJ = 25C unless otherwise specified | 1200 | V | ||
| DC collector current | IC | TC = 25C | 80 | A | ||
| DC collector current | IC | TC = 100C | 40 | A | ||
| Pulsed collector current | ICM | TC = 25C | 160 | A | ||
| Maximum Diode forward current | IF | TC = 25C | 80 | A | ||
| Maximum Diode forward current | IF | TC = 100C | 40 | A | ||
| Diode pulsed current | IFM | TC = 25C | 160 | A | ||
| Gate-Emitter voltage | VGE | TVJ = 25C | -20 | +20 | V | |
| Transient Gate-Emitter Voltage | (tp 10s, D < 0.010), TVJ = 25C | -30 | +30 | V | ||
| Power Dissipation | Ptot | TC = 25C | 417 | W | ||
| Power Dissipation | Ptot | TC = 100C | 208 | W | ||
| Operating Junction Temperature Range | TVJ | -40 | +175 | C | ||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance | ||||||
| Thermal resistance: junction - ambient | RJA | 40 | C/W | |||
| Thermal resistance: junction - case IGBT | RJC | 0.36 | C/W | |||
| Thermal resistance: junction - case Diode | RJC | Diode | 0.45 | C/W | ||
| Electrical Characteristics | ||||||
| Collector - Emitter Breakdown Voltage | V(BR)CES | VGE = 0V , IC = 0.5mA | 1200 | V | ||
| Collector - Emitter Saturation Voltage | VCESAT | VGE = 15V , IC = 40A ,TVJ = 25C | 1.6 | 1.9 | 2.3 | V |
| Collector - Emitter Saturation Voltage | VCESAT | VGE = 15V , IC = 40A ,TVJ = 175C | 2.9 | V | ||
| Diode forward voltage | VF | VGE = 0V , IC = 40A ,TVJ = 25C | 2.5 | V | ||
| Diode forward voltage | VF | VGE = 0V , IC = 40A ,TVJ = 175C | 1.8 | V | ||
| Gate-Emitter threshold voltage | VGE(th) | VGE = VCE, IC = 250mA | 5.1 | 5.8 | 6.5 | V |
| Zero Gate voltage Collector current | ICES | VCE = 650V , VGE = 0V | 250.0 | mA | ||
| Gate-Emitter leakage current | IGES | VGE = 20V , VCE = 0V | 100 | nA | ||
| Transconductance | gfs | VGE = 20V, IC = 40A | 28 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Cies | VGE = 0V, VCE = 25V, f = 1MHz | 5047 | pF | ||
| Output Capacitance | Coes | 161 | pF | |||
| Reverse Transfer Capacitance | Cres | 35 | pF | |||
| Gate Charge | Qg | VGE = 0 to 15V VCE = 960V, IC = 40A | 170 | nC | ||
| Gate to Emitter charge | Qge | 37.5 | nC | |||
| Gate to Collector charge | Qgc | 68 | nC | |||
| Switching Characteristics | ||||||
| Turn-On DelayTime | td(on) | VGE = 15V, VCC = 600V IC=40A, RG(off) = 12,RG(off) = 12 | 48 | ns | ||
| Turn-On Rise Time | tr | 50 | ns | |||
| Turn-Off DelayTime | td(off) | 195 | ns | |||
| Turn-Off Fall Time | tf | 100 | ns | |||
| Turn-on energy | Eon | 2.65 | mJ | |||
| Turn-off energy | Eoff | 1.6 | mJ | |||
| Total switching energy | Ets | 4.25 | mJ | |||
| Diode Recovery Characteristics | ||||||
| Reverse recovery time | Trr | VR = 600 V, IF = 40 A, di/dt = 600 A/S | 375 | ns | ||
| Reverse recovery charge | Qrr | 2.29 | mC | |||
| Peak reverse recovery current | Irrm | 15 | A | |||
2509181738_HXY-MOSFET-IXYH40N120B3D1-HXY_C49003429.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
