HXY MOSFET SCT3030KLHRC11 HXY SiC Power MOSFET Featuring High Blocking Voltage and Low On Resistance
Key Attributes
Model Number:
SCT3030KLHRC11-HXY
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
63A
RDS(on):
43mΩ
Operating Temperature -:
-40℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3.6V
Reverse Transfer Capacitance (Crss@Vds):
8pF
Output Capacitance(Coss):
129pF
Pd - Power Dissipation:
283W
Input Capacitance(Ciss):
3.357nF
Gate Charge(Qg):
114nC
Mfr. Part #:
SCT3030KLHRC11-HXY
Package:
TO-247
Product Description
Product Overview
The SCT3030KLHRC11 is a 3rd Generation SiC Power MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. It features N-Channel Enhancement Mode operation, high blocking voltage with low on-resistance, and high-speed switching with low capacitances. Its fast intrinsic diode offers low reverse recovery. This RoHS compliant and halogen-free component enhances system efficiency, reduces cooling requirements, increases power density, and allows for higher system switching frequencies.
Product Attributes
- Brand: HUAXUANYANG
- Model: SCT3030KLHRC11
- Material: SiC Power MOSFET
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Certifications: RoHS compliant, Halogen free
Technical Specifications
| Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions | Note |
|---|---|---|---|---|---|---|---|
| Maximum Ratings | |||||||
| VDSmax | Drain - Source Voltage | 1200 | V | VGS = 0 V, ID = 100 A | |||
| VGSmax | Gate - Source Voltage (dynamic) | -8 | +19 | V | AC (f >1 Hz) | Note 1 | |
| VGSop | Gate - Source Voltage (static) | -4 | +15 | V | Static | Note 2 | |
| ID | Continuous Drain Current | 63 | A | VGS = 15 V, TC = 25C | Fig. 19 | ||
| ID | Continuous Drain Current | 48 | A | VGS = 15 V, TC = 100C | |||
| ID(pulse) | Pulsed Drain Current | 120 | A | Pulse width tP limited by TJmax | |||
| PD | Power Dissipation | 283 | W | TC=25C, TJ = 175 C | Fig. 20 | ||
| TJ , Tstg | Operating Junction and Storage Temperature | -40 | +175 | C | |||
| TL | Solder Temperature | 260 | C | 1.6mm (0.063) from case for 10s | |||
| Md | Mounting Torque | 1 | 8.8 | Nm lbf-in | M3 or 6-32 screw | Note | |
| Electrical Characteristics | |||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | 1200 | V | VGS = 0 V, ID = 100 A | |||
| VGS(th) | Gate Threshold Voltage | 1.8 | 2.5 | 3.6 | V | VDS = VGS, ID = 11.5 mA | Fig. 11 |
| VDS = VGS, ID = 11.5 mA, TJ = 175C | |||||||
| IDSS | Zero Gate Voltage Drain Current | 1 | 50 | A | VDS = 1200 V, VGS = 0 V | ||
| IGSS | Gate-Source Leakage Current | 10 | 250 | nA | VGS = 15 V, VDS = 0 V | ||
| RDS(on) | Drain-Source On-State Resistance | 23 | 32 | 43 | m | VGS = 15 V, ID = 40 A | Fig. 4, 5, 6 |
| VGS = 15 V, ID = 40 A, TJ = 175C | |||||||
| gfs | Transconductance | 27 | S | VDS= 20 V, IDS= 40 A | Fig. 7 | ||
| VDS= 20 V, IDS= 40 A, TJ = 175C | |||||||
| Ciss | Input Capacitance | 3357 | pF | VGS = 0 V, VDS = 1000 V f = 100 kHz VAC = 25 mV | Fig. 17, 18 | ||
| Coss | Output Capacitance | 129 | |||||
| Crss | Reverse Transfer Capacitance | 8 | |||||
| Eoss | Coss Stored Energy | 76 | J | Fig. 16 | |||
| EON | Turn-On Switching Energy (SiC Diode FWD) | 1.94 | mJ | VDS = 800 V, VGS = -4 V/+15 V, ID = 40A, RG(ext) = 5, L= 157 H, Tj = 175C | Fig. 26 | ||
| EOFF | Turn Off Switching Energy (SiC Diode FWD) | 0.79 | |||||
| EON | Turn-On Switching Energy (Body Diode FWD) | 3.10 | mJ | VDS = 800 V, VGS = -4 V/+15 V, ID = 40A, RG(ext) = 5, L= 157 H, Tj = 175C | Fig. 26 | ||
| EOFF | Turn Off Switching Energy (Body Diode FWD) | 0.72 | |||||
| td(on) | Turn-On Delay Time | 107 | ns | VDD = 800 V, VGS = -4 V/15 V RG(ext) = 5 , ID = 40 A, L= 157 | Timing relative to VDS, Inductive load Fig. 27 | ||
| tr | Rise Time | 22 | |||||
| td(off) | Turn-Off Delay Time | 39 | |||||
| tf | Fall Time | 19 | |||||
| RG(int) | Internal Gate Resistance | 1.7 | f = 1 MHz, VAC = 25 mV | ||||
| Qgs | Gate to Source Charge | 35 | nC | VDS = 800 V, VGS = -4 V/15 V ID = 40 A Per IEC60747-8-4 pg 21 | Fig. 12 | ||
| Qgd | Gate to Drain Charge | 40 | |||||
| Qg | Total Gate Charge | 114 | |||||
| Reverse Diode Characteristics | |||||||
| VSD | Diode Forward Voltage | 4.6 | V | VGS = -4 V, ISD = 20 A, TJ = 25 C | Fig. 8, 9, 10 | ||
| VSD | Diode Forward Voltage | 4.2 | V | VGS = -4 V, ISD = 20 A, TJ = 175 C | |||
| IS | Continuous Diode Forward Current | 62 | A | VGS = -4 V, TC = 25C | Note 1 | ||
| IS, pulse | Diode pulse Current | 120 | A | VGS = -4 V, pulse width tP limited by TJmax | Note 1 | ||
| trr | Reverse Recover time | 69 | ns | VGS = -4 V, ISD = 40 A, VR = 800 V dif/dt = 1500 A/s, TJ = 175 C | Note 1 | ||
| Qrr | Reverse Recovery Charge | 848 | nC | ||||
| Irrm | Peak Reverse Recovery Current | 19 | A | ||||
| Thermal Characteristics | |||||||
| RJC | Thermal Resistance from Junction to Case | 0.45 | C/W | Fig. 21 | |||
| RJA | Thermal Resistance From Junction to Ambient | 40 | |||||
2509181734_HXY-MOSFET-SCT3030KLHRC11-HXY_C48972089.pdf
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