Infineon BT149G 412 sensitive gate thyristors in plastic SOT54 package for logic integrated circuits
Key Attributes
Model Number:
BT149G,412
Product Custom Attributes
Mfr. Part #:
BT149G,412
Package:
TO-92-3
Product Description
Product Overview
The BT149 series are passivated, sensitive gate thyristors in a SOT54 plastic package, designed for direct interfacing with microcontrollers, logic integrated circuits, and other low power gate trigger circuits. They are suitable for general purpose switching and phase control applications.
Product Attributes
- Brand: NXP Semiconductors
- Package Type: SOT54 (TO-92)
- Certifications: Epoxy meets requirements of UL94 V-0 at 1/8 inch.
Technical Specifications
| Type Number | VDRM, VRRM (V) | IT(RMS) (A) | IT(AV) (A) | ITSM (A) |
|---|---|---|---|---|
| BT149B | 200 | 0.8 | 0.5 | 8 (t=10ms), 9 (t=8.3ms) |
| BT149D | 400 | 0.8 | 0.5 | 8 (t=10ms), 9 (t=8.3ms) |
| BT149G | 600 | 0.8 | 0.5 | 8 (t=10ms), 9 (t=8.3ms) |
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| IGT (gate trigger current) | VD = 12 V; IT = 10 mA; gate open circuit | - | 50 | 200 | A |
| IL (latching current) | VD = 12 V; IGT = 0.5 mA; RGK = 1 k | - | 2 | 6 | mA |
| IH (holding current) | VD = 12 V; IGT = 0.5 mA; RGK = 1 k | - | 2 | 5 | mA |
| VT (on-state voltage) | IT = 1.2 A | - | 1.25 | 1.7 | V |
| VGT (gate trigger voltage) | IT = 10 mA; gate open circuit; VD = 12 V | - | 0.5 | 0.8 | V |
| VGT (gate trigger voltage) | VD = VDRM(max); Tj = 125 C | 0.2 | 0.3 | - | V |
| ID, IR (off-state leakage current) | VD = VDRM(max); VR = VRRM(max); Tj = 125 C; RGK = 1 k | - | 0.05 | 0.1 | mA |
| dVD/dt (critical rate of rise of off-state voltage) | VDM = 67 % VDRM(max); Tj = 125 C; exponential waveform; gate open circuit | - | 25 | - | V/s |
| dVD/dt (critical rate of rise of off-state voltage) | VDM = 67 % VDRM(max); Tj = 125 C; exponential waveform; RGK = 1 k | - | 500 | 800 | V/s |
| tgt (gate controlled turn-on time) | ITM = 2 A; VD = VDRM(max); IG = 10 mA; dIG/dt = 0.1 A/s | - | 2 | - | s |
| tq (circuit commuted turn-off time) | VD = 67 % VDRM(max); Tj = 125 C; ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/s; dVD/dt = 2 V/s; RGK = 1 k | - | 100 | - | s |
2411261527_Infineon-BT149G-412_C282429.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
