HXY MOSFET NTTFS5826NL HXY N Channel Enhancement Mode MOSFET with 46 Amp Pulsed Drain Current Rating
Key Attributes
Model Number:
NTTFS5826NL-HXY
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
64pF@48V
Number:
1 N-channel
Output Capacitance(Coss):
-
Pd - Power Dissipation:
34.7W
Input Capacitance(Ciss):
1.378nF@48V
Gate Charge(Qg):
12.6nC@4.5V
Mfr. Part #:
NTTFS5826NL-HXY
Package:
DFN-8L(3x3)
Product Description
Product Description
The NTTFS5826NL is an N-Channel Enhancement Mode MOSFET that utilizes advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications.
Product Attributes
- Brand: HXY (Shenzhen HuaXuanYang Electronics CO.,LTD)
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: DFN3X3-8L
- Marking: NTTFS5826NL
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA | Continuous Drain Current, VGS @ 10V | TA=25 | 15 | A | ||
| TA=70 | 11 | A | ||||
| IDM | Pulsed Drain Current | 46 | A | |||
| EAS | Single Pulse Avalanche Energy | 25.5 | mJ | |||
| IAS | Avalanche Current | 20 | A | |||
| PD@TC | Total Power Dissipation | TC=25 | 34.7 | W | ||
| TSTG | Storage Temperature Range | -55 | 175 | |||
| TJ | Operating Junction Temperature Range | -55 | 175 | |||
| RJA | Thermal Resistance Junction-Ambient | 62 | /W | |||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 60 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=60V, VGS = 0V | - | 1.0 | A | |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS = 20V | - | 100 | nA | |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 1.0 | 1.6 | 2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS=10V, ID=5A | 28 | 40 | m | |
| VGS=4.5V, ID=3A | 36 | 50 | m | |||
| Ciss | Input Capacitance | VDS=25V, VGS=0V, f=1.0MHz | 1148 | - | pF | |
| Coss | Output Capacitance | 58.5 | - | pF | ||
| Crss | Reverse Transfer Capacitance | 49.4 | - | pF | ||
| Qg | Total Gate Charge | VDS=30V, ID=2.5A, VGS=10V | 20.3 | - | nC | |
| Qgs | Gate-Source Charge | 3.7 | - | nC | ||
| Qgd | Gate-Drain(Miller) Charge | 5.3 | - | nC | ||
| td(on) | Turn-on Delay Time | VDS=30V, ID=5A, RG=1.8, VGS=10V | 7.6 | - | ns | |
| tr | Turn-on Rise Time | 20 | - | ns | ||
| td(off) | Turn-off Delay Time | 15 | - | ns | ||
| tf | Turn-off Fall Time | 24 | - | ns | ||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | 5 | A | ||
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | 15 | A | ||
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=5A | - | 1.2 | V | |
| trr | Body Diode Reverse Recovery Time | IF=5A, dI/dt=100A/s | 29 | - | ns | |
| Qrr | Body Diode Reverse Recovery Charge | 43 | - | nC |
2511171526_HXY-MOSFET-NTTFS5826NL-HXY_C5148681.pdf
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