switching transistor HXY MOSFET IXXH60N65B4-HXY designed for high pulsed collector current applications
Key Attributes
Model Number:
IXXH60N65B4-HXY
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
124ns
Td(on):
24ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
183nC@15V
Reverse Recovery Time(trr):
136ns
Switching Energy(Eoff):
1.2mJ
Turn-On Energy (Eon):
1.4mJ
Input Capacitance(Cies):
3.356nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
179pF
Mfr. Part #:
IXXH60N65B4-HXY
Package:
TO-247
Product Description
Product Overview
The IXXH60N65B4 is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improving switching speed, and increasing avalanche energy. It is suitable for applications requiring efficient power conversion and robust operation.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: IXXH60N65B4
- Technology: Advanced Trench and Field Stop (T-FS)
- Certifications: Halogen Free, Green Devices Available, RoHS Compliant
- Package Type: TO-247
- Package Quantity: 30 per tube
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 650 | V | Collector-Emitter Voltage |
| IC @TC=25C | 100 | A | Collector Current |
| IC @TC=100C | 60 | A | Collector Current |
| ICM | 200 | A | Pulsed Collector Current |
| VCE(sat).typ @IC=60A, TJ=25C | 1.65 | V | Collector-Emitter Saturation Voltage |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage |
| PD @TC=25C | 250 | W | Power Dissipation |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.60 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.55 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| Cies | 3356 | pF | Input Capacitance |
| Coes | 179 | pF | Output Capacitance |
| Cres | 93 | pF | Reverse Transfer Capacitance |
| Qg | 183 | nC | Gate charge |
| td(on) @TJ=25C | 24 | ns | Turn-on Delay Time |
| tr @TJ=25C | 88 | ns | Rise Time |
| td(off) @TJ=25C | 124 | ns | Turn-Off Delay Time |
| tf @TJ=25C | 73 | ns | Fall Time |
| Eon @TJ=25C | 1.40 | mJ | Turn-On Switching Loss |
| Eoff @TJ=25C | 1.20 | mJ | Turn-Off Switching Loss |
| Ets @TJ=25C | 2.60 | mJ | Total Switching Loss |
| Trr @TJ=25C | 136 | ns | Reverse Recovery Time (Diode) |
| Qrr @TJ=25C | 350 | nC | Reverse Recovery Charge (Diode) |
| Irrm @TJ=25C | 6.9 | A | Reverse Recovery Current (Diode) |
2509181738_HXY-MOSFET-IXXH60N65B4-HXY_C49003431.pdf
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