Power Switching Device HXY MOSFET IRFR024NT N Channel Enhancement Mode with Low Gate Charge and RDS
Key Attributes
Model Number:
IRFR024NT
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
26mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
1.378nF@15V
Pd - Power Dissipation:
34.7W
Gate Charge(Qg):
12.6nC@4.5V
Mfr. Part #:
IRFR024NT
Package:
TO-252-2L
Product Description
Product Overview
The IRFR024NT is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is ideal for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen, China
- Package: TO-252-2(DPAK)
- Marking: 30N06XXXX
Technical Specifications
| Symbol | Parameter | Rating | Units | Conditions | Min. | Typ. | Max. |
| Absolute Maximum Ratings | |||||||
| VDS | Drain-Source Voltage | 60 | V | ||||
| VGS | Gate-Source Voltage | ±20 | V | ||||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 30 | A | ||||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 15 | A | ||||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V | 5.6 | A | ||||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V | 4.5 | A | ||||
| IDM | Pulsed Drain Current | 46 | A | ||||
| EAS | Single Pulse Avalanche Energy | 25.5 | mJ | ||||
| IAS | Avalanche Current | 22.6 | A | ||||
| PD@TC=25 | Total Power Dissipation | 34.7 | W | ||||
| PD@TA=25 | Total Power Dissipation | 2 | W | ||||
| TSTG | Storage Temperature Range | -55 to 150 | |||||
| TJ | Operating Junction Temperature Range | -55 to 150 | |||||
| Thermal Resistance | |||||||
| RJA | Junction-Ambient | /W | 1 | 62 | |||
| RJC | Junction-Case | /W | 1 | 3.6 | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||||
| BVDSS | Drain-Source Breakdown Voltage | 60 | V | VGS=0V , ID=250uA | |||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | V/ | Reference to 25 , ID=1mA | 0.063 | |||
| RDS(ON) | Static Drain-Source On-Resistance | 26 | Ω | VGS=10V , ID=15A | 22 | ||
| RDS(ON) | Static Drain-Source On-Resistance | 38 | Ω | VGS=4.5V , ID=10A | 30 | ||
| VGS(th) | Gate Threshold Voltage | 2.5 | V | VGS=VDS , ID =250uA | 1.2 | ||
| ΔVGS(th) | VGS(th) Temperature Coefficient | mV/ | -5.24 | ||||
| IDSS | Drain-Source Leakage Current | 1 | μA | VDS=48V , VGS=0V , TJ=25 | |||
| IDSS | Drain-Source Leakage Current | 5 | μA | VDS=48V , VGS=0V , TJ=55 | |||
| IGSS | Gate-Source Leakage Current | ±100 | nA | VGS=±20V , VDS=0V | |||
| gfs | Forward Transconductance | S | VDS=5V , ID=15A | 17 | |||
| Rg | Gate Resistance | Ω | VDS=0V , VGS=0V , f=1MHz | 3.2 | |||
| Qg | Total Gate Charge (4.5V) | nC | VDS=48V , VGS=4.5V , ID=12A | 12.6 | |||
| Qgs | Gate-Source Charge | nC | 3.2 | ||||
| Qgd | Gate-Drain Charge | nC | 6.3 | ||||
| Td(on) | Turn-On Delay Time | ns | VDD=30V , VGS=10V , RG=3.3 , ID=10A | 8 | |||
| Tr | Rise Time | ns | 14.2 | ||||
| Td(off) | Turn-Off Delay Time | ns | 24.4 | ||||
| Tf | Fall Time | ns | 4.6 | ||||
| Ciss | Input Capacitance | pF | VDS=15V , VGS=0V , f=1MHz | 1378 | |||
| Coss | Output Capacitance | pF | 86 | ||||
| Crss | Reverse Transfer Capacitance | pF | 64 | ||||
| IS | Continuous Source Current | 23 | A | VG=VD=0V , Force Current | |||
| ISM | Pulsed Source Current | 46 | A | ||||
| VSD | Diode Forward Voltage | 1.2 | V | VGS=0V , IS=1A , TJ=25 | |||
2509181604_HXY-MOSFET-IRFR024NT_C5261060.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
