High Blocking Voltage SiC MOSFET HXY MOSFET SCT2080KEGC11 HXY Perfect for Switch Mode Power Supplies
Key Attributes
Model Number:
SCT2080KEGC11-HXY
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
36A
Operating Temperature -:
-55℃~+150℃
RDS(on):
98mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
7.5pF
Output Capacitance(Coss):
92pF
Input Capacitance(Ciss):
1.13nF
Pd - Power Dissipation:
192W
Gate Charge(Qg):
71nC
Mfr. Part #:
SCT2080KEGC11-HXY
Package:
TO-247
Product Description
Product Overview
The SCT2080KEGC11 is a SiC Power MOSFET, N-Channel Enhancement Mode device from HUAXUANYANG ELECTRONICS CO.,LTD. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive. This MOSFET is resistant to latch-up and is Halogen Free and RoHS Compliant, leading to higher system efficiency, reduced cooling requirements, increased power density, and increased system switching frequency. It is suitable for applications such as solar inverters, switch mode power supplies, high voltage DC/DC converters, battery chargers, motor drives, and pulsed power applications.
Product Attributes
- Brand: HXY (Shenzhen HuaXuanYang Electronics CO.,LTD)
- Part Number: SCT2080KEGC11
- Package: TO-247
- Material: SiC (Silicon Carbide)
- Certifications: Halogen Free, RoHS Compliant
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions | Note |
|---|---|---|---|---|---|---|---|
| Maximum Ratings | |||||||
| Drain - Source Voltage | VDSmax | 1200 | V | VGS = 0 V, ID = 100 A | |||
| Gate - Source Voltage | VGSmax | V | Absolute maximum values | -10/+25 | |||
| Gate - Source Voltage | VGSop | V | Recommended operational values | -5/+20 | |||
| Continuous Drain Current | ID | 36 | A | VGS = 20 V, TC = 25C | Fig. 19 | ||
| Continuous Drain Current | ID | 24 | A | VGS = 20 V, TC = 100C | |||
| Pulsed Drain Current | ID(pulse) | 80 | A | Pulse width tP limited by Tjmax | Fig. 22 | ||
| Power Dissipation | PD | 192 | W | TC=25C, TJ = 150 C | Fig. 20 | ||
| Operating Junction and Storage Temperature | TJ , Tstg | -55 | +150 | C | |||
| Solder Temperature | TL | 260 | C | 1.6mm (0.063) from case for 10s | |||
| Mounting Torque | Md | 1 | 8.8 | Nm lbf-in | M3 or 6-32 screw | ||
| Electrical Characteristics | |||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | V | VGS = 0 V, ID = 100 A | |||
| Gate Threshold Voltage | VGS(th) | 2.0 | 2.9 | 4 | V | VDS = VGS, ID = 5 mA | Fig. 11 |
| Gate Threshold Voltage | VGS(th) | 2.4 | V | VDS = VGS, ID = 5 mA, TJ = 150C | |||
| Zero Gate Voltage Drain Current | IDSS | 1 | 100 | A | VDS = 1200 V, VGS = 0 V | ||
| Gate-Source Leakage Current | IGSS | 250 | nA | VGS = 20 V, VDS = 0 V | |||
| Drain-Source On-State Resistance | RDS(on) | 80 | 98 | m | VGS = 20 V, ID = 20 A | Fig. 4, 5, 6 | |
| Drain-Source On-State Resistance | RDS(on) | 144 | m | VGS = 20 V, ID = 20A, TJ = 150C | |||
| Transconductance | gfs | 10 | S | VDS= 20 V, IDS= 20 A | Fig. 7 | ||
| Transconductance | gfs | 9 | S | VDS= 20 V, IDS= 20 A, TJ = 150C | |||
| Input Capacitance | Ciss | 1130 | pF | VGS = 0 V, VDS = 1000 V, f = 1 MHz, VAC = 25 mV | Fig. 17, 18 | ||
| Output Capacitance | Coss | 92 | pF | VGS = 0 V, VDS = 1000 V, f = 1 MHz, VAC = 25 mV | Fig. 17, 18 | ||
| Reverse Transfer Capacitance | Crss | 7.5 | pF | VGS = 0 V, VDS = 1000 V, f = 1 MHz, VAC = 25 mV | Fig. 17, 18 | ||
| Stored Energy | Eoss | 50 | J | VGS = 0 V, VDS = 1000 V, f = 1 MHz, VAC = 25 mV | Fig. 16 | ||
| Avalanche Energy, Single Pulse | EAS | 1 | J | ID = 20A, VDD = 50V | Fig. 29 | ||
| Turn-On Switching Energy | EON | 523 | J | VDS = 800 V, VGS = -5/20 V, ID = 20A, RG(ext) = 2.5, L= 156 H | Fig. 25 | ||
| Turn Off Switching Energy | EOFF | 72 | J | VDS = 800 V, VGS = -5/20 V, ID = 20A, RG(ext) = 2.5, L= 156 H | Fig. 25 | ||
| Turn-On Delay Time | td(on) | 15 | ns | VDD = 800 V, VGS = -5/20 V, ID = 20 A, RG(ext) = 2.5 , RL = 40 , Timing relative to VDS Per IEC60747-8-4 pg 83 | Fig. 27 | ||
| Rise Time | tr | 22 | ns | VDD = 800 V, VGS = -5/20 V, ID = 20 A, RG(ext) = 2.5 , RL = 40 , Timing relative to VDS Per IEC60747-8-4 pg 83 | Fig. 27 | ||
| Turn-Off Delay Time | td(off) | 24 | ns | VDD = 800 V, VGS = -5/20 V, ID = 20 A, RG(ext) = 2.5 , RL = 40 , Timing relative to VDS Per IEC60747-8-4 pg 83 | Fig. 27 | ||
| Fall Time | tf | 14 | ns | VDD = 800 V, VGS = -5/20 V, ID = 20 A, RG(ext) = 2.5 , RL = 40 , Timing relative to VDS Per IEC60747-8-4 pg 83 | Fig. 27 | ||
| Internal Gate Resistance | RG(int) | 3.9 | f = 1 MHz, VAC = 25 mV | ||||
| Gate to Source Charge | Qgs | 17 | nC | VDS = 800 V, VGS = -5/20 V, ID = 20 A Per IEC60747-8-4 pg 21 | Fig. 12 | ||
| Gate to Drain Charge | Qgd | 29 | nC | VDS = 800 V, VGS = -5/20 V, ID = 20 A Per IEC60747-8-4 pg 21 | Fig. 12 | ||
| Total Gate Charge | Qg | 71 | nC | VDS = 800 V, VGS = -5/20 V, ID = 20 A Per IEC60747-8-4 pg 21 | Fig. 12 | ||
| Reverse Diode Characteristics | |||||||
| Diode Forward Voltage | VSD | 4.3 | V | VGS = - 5 V, ISD = 10 A | Fig. 8, 9, 10 | ||
| Diode Forward Voltage | VSD | 3.8 | V | VGS = - 5 V, ISD = 10 A, TJ = 150 C | |||
| Continuous Diode Forward Current | IS | 36 | A | TC = 25C | Note 1 | ||
| Reverse Recover time | trr | 24 | ns | VGS = - 5 V, ISD = 20 A, VR = 800 V, dif/dt = 1950 A/s | Note 1 | ||
| Reverse Recovery Charge | Qrr | 152 | nC | VGS = - 5 V, ISD = 20 A, VR = 800 V, dif/dt = 1950 A/s | Note 1 | ||
| Peak Reverse Recovery Current | Irrm | 10 | A | VGS = - 5 V, ISD = 20 A, VR = 800 V, dif/dt = 1950 A/s | Note 1 | ||
| Thermal Characteristics | |||||||
| Thermal Resistance from Junction to Case | RJC | 0.60 | 0.65 | C/W | Fig. 21 | ||
| Thermal Resistance From Junction to Ambient | RJA | 40 | C/W | ||||
2509181734_HXY-MOSFET-SCT2080KEGC11-HXY_C48972091.pdf
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