SiC Power MOSFET N Channel Enhancement Mode HXY MOSFET UJ3C065030T3S HXY for Industrial Power Systems
Key Attributes
Model Number:
UJ3C065030T3S-HXY
Product Custom Attributes
Mfr. Part #:
UJ3C065030T3S-HXY
Package:
TO-220C
Product Description
SiC Power MOSFET N-Channel Enhancement Mode
The HUAXUANYANG HXY SiC Power MOSFET is an N-Channel Enhancement Mode device designed for high-performance power applications. Leveraging Wide bandgap SiC MOSFET technology, it offers reduced switching losses, increased system switching frequency, and higher power density. This leads to reduced heat sink requirements, making it ideal for demanding applications such as switch mode power supplies, renewable energy systems, on-board chargers, and high voltage DC/DC converters.
Product Attributes
- Brand: HXY
- Manufacturer: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Website: www.hxymos.com
- Material: SiC (Silicon Carbide)
- Certifications: Halogen free, RoHS compliant
Technical Specifications
| Ordering Part Number | Package | Brand | VDSmax (V) | VGSmax (V) | ID (A) @ TC=25C | PD (W) @ TC=25C | Tj (C) | RDS(on) (m) @ VGS=18V, ID=40A, TC=25C | V(BR)DSS (V) | VGS(th) (V) | Ciss (pF) | Coss (pF) | Crss (pF) | Rth(jc) (K/W) |
| UJ3C065030T3S | TO-220C | HXY | 650 | -10/+25 | 105 | 375 | -55~175 | 26 | 650 | 3.0 | 2543 | 173 | 8 | 0.4 |
| UJ3C065030T3S | TO-247 | HXY | 650 | -10/+25 | 176 | 375 | -55~175 | 26 | 650 | 3.0 | 2543 | 173 | 8 | 0.4 |
2512091725_HXY-MOSFET-UJ3C065030T3S-HXY_C53133785.pdf
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