High Current MOSFET HXY MOSFET IRFP450-HXY with Low RDS ON and Gate Voltage Operation from 4.5 Volts
Key Attributes
Model Number:
IRFP450-HXY
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
14A
Operating Temperature -:
-55℃~+150℃
RDS(on):
430mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
340pF
Number:
1 N-channel
Output Capacitance(Coss):
720pF
Pd - Power Dissipation:
190W
Input Capacitance(Ciss):
2.6nF
Gate Charge(Qg):
150nC@10V
Mfr. Part #:
IRFP450-HXY
Package:
TO-247
Product Description
Product Description
The IRFP450 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible using gate voltages as low as 4.5V. This device is ideal for battery protection and other switching applications.
General Features
- Advanced trench technology
- Excellent RDS(ON)
- Low gate charge
- Operation with gate voltages as low as 4.5V
Applications
- Battery protection
- Load switch
- Uninterruptible power supply
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Product ID: IRFP450
- Package: TO-247S(TO-247AC-3)
- Marking: IRFP450
- Pack Qty: 30 PCS
- Website: www.hxymos.com
Technical Specifications
| Symbol | Parameter | Rating | Units | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 500 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 14 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 8.7 | A | |||
| IDM | Pulsed Drain Current | 56 | A | |||
| EAS | Single Pulse Avalanche Energy | 760 | mJ | |||
| IAS | Avalanche Current | 8.7 | A | |||
| PD@TC=25 | Total Power Dissipation | 190 | W | |||
| TSTG | Storage Temperature Range | -55 to 150 | ||||
| TJ | Operating Junction Temperature Range | -55 to 150 | ||||
| RthJA | Maximum Junction-to-Ambient | 40 | /W | |||
| RthJC | Maximum Junction-to-Case (Drain) | 0.65 | /W | |||
| VDS | Static Drain-Source Breakdown Voltage | 500 | V | |||
| ΔVDS/TJ | VDS Temperature Coefficient | V/°C | -0.63 | |||
| VGS(th) | Gate-Source Threshold Voltage | V | 2.0 | 4.0 | ||
| IGSS | Gate-Source Leakage | nA | ±100 | |||
| IDSS | Zero Gate Voltage Drain Current | µA | 25 | |||
| IDSS (TJ = 125 °C) | Zero Gate Voltage Drain Current | µA | 250 | |||
| RDS(on) | Drain-Source On-State Resistance | 0.43 | Ω | 0.5 | ||
| gfs | Forward Transconductance | 9.3 | S | |||
| Ciss | Input Capacitance | 2600 | pF | |||
| Coss | Output Capacitance | 720 | pF | |||
| Crss | Reverse Transfer Capacitance | 340 | pF | |||
| Qg | Total Gate Charge | 150 | nC | |||
| Qgs | Gate-Source Charge | 20 | nC | |||
| Qgd | Gate-Drain Charge | 80 | nC | |||
| td(on) | Turn-On Delay Time | 17 | ns | |||
| tr | Rise Time | 47 | ns | |||
| td(off) | Turn-Off Delay Time | 92 | ns | |||
| tf | Fall Time | 44 | ns | |||
| LD | Internal Drain Inductance | 5.0 | nH | |||
| LS | Internal Source Inductance | 13 | nH | |||
| IS | Continuous Source-Drain Diode Current | 14 | A | |||
| ISM | Pulsed Diode Forward Current | 56 | A | |||
| VSD | Body Diode Voltage | 1.4 | V | |||
| trr | Body Diode Reverse Recovery Time | ns | 540 | 810 | ||
| Qrr | Body Diode Reverse Recovery Charge | µC | 4.8 | 7.2 |
2509181741_HXY-MOSFET-IRFP450-HXY_C7469135.pdf
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