switching component HXY MOSFET 5N10-HXY N Channel transistor with low gate charge and 100 volt rating
Key Attributes
Model Number:
5N10-HXY
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
125mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
3.6pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
182pF@50V
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
3.57nC@10V
Mfr. Part #:
5N10-HXY
Package:
SOT-23
Product Description
Product Overview
The 5N10-HXY N-Channel MOSFET utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is ideally suited for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Origin: Shenzhen, China
- Model: 5N10-HXY
- Package: SOT-23
- Marking: MA6
- Certifications: None specified
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V | 5 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V | 3.2 | A | |||
| IDM | Pulsed Drain Current | 16 | A | |||
| PD@TA=25 | Total Power Dissipation | 3.1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-ambient(steady state) | 100 | /W | |||
| RJA | Thermal Resistance Junction-ambient(t<10s) | 40 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | 108 | V | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=4A | 12 | 110 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=2A | 120 | 145 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=85 | 50 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 2.3 | 4.6 | ||
| Qg | Total Gate Charge (10V) | VDS=30V , VGS=10V , ID=4A | 3.57 | nC | ||
| Qgs | Gate-Source Charge | 0.76 | nC | |||
| Qgd | Gate-Drain Charge | 0.71 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3 ID=1A | 11 | ns | ||
| Tr | Rise Time | 6 | ns | |||
| Td(off) | Turn-Off Delay Time | 30 | ns | |||
| Tf | Fall Time | 4 | ns | |||
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | 182 | pF | ||
| Coss | Output Capacitance | 30 | pF | |||
| Crss | Reverse Transfer Capacitance | 3.6 | pF | |||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 2 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | 1.2 | V |
2509181601_HXY-MOSFET-5N10-HXY_C4748730.pdf
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