Insulated Gate Bipolar Transistor HXY MOSFET IRG7PH46UD-EP-HXY with 1200V Voltage and 40A Current
Key Attributes
Model Number:
IRG7PH46UD-EP-HXY
Product Custom Attributes
Pd - Power Dissipation:
441W
Td(off):
262ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
346nC@15V
Reverse Recovery Time(trr):
94ns
Switching Energy(Eoff):
2.3mJ
Turn-On Energy (Eon):
1.3mJ
Input Capacitance(Cies):
3.98nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
157pF
Mfr. Part #:
IRG7PH46UD-EP-HXY
Package:
TO-247
Product Description
Product Overview
The IRG7PH46UD-EP is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficiency, featuring a positive temperature coefficient, fast switching speeds, low VCE(sat), and rugged construction. The device is AEC-Q101 qualified and operates at temperatures up to 175. It is available in halogen-free and green (RoHS compliant) versions.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Product Name: IRG7PH46UD-EP
- Package Type: TO-247
- Certifications: AEC-Q101 Qualified, RoHS Compliant
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Parameter | Value | Unit | Description |
|---|---|---|---|
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC | 40 | A | Collector Current @TC=100C |
| VCE(sat).typ | 1.70 | V | Collector-Emitter Saturation Voltage (Typ.) |
| ICM | 160 | A | Pulsed Collector Current |
| IF | 40 | A | Diode Continuous Forward Current @TC=100C |
| IFM | 160 | A | Diode Maximum Forward Current |
| VGES | 30 | V | Gate-Emitter Voltage |
| PD | 441 | W | Power Dissipation @TC=25C |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| TL | 260 | Maximum Temperature for Soldering | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.80 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| VCE(sat) @ TJ=25 | 1.70 | V | Collector-Emitter Saturation Voltage |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage |
| VF @ IF=40A, TJ=25 | 1.85 | V | Diode Forward Voltage |
| ICES | 10 | A | Collector-Emitter Leakage Current @VCE=1200V |
| IGES(F) | 200 | nA | Gate-Emitter Forward Leakage Current @VGE=+20V |
| IGES(R) | -200 | nA | Gate-Emitter Reverse Leakage Current @VGE=-20V |
| Cies | 3980 | pF | Input Capacitance |
| Coes | 157 | pF | Output Capacitance |
| Cres | 93 | pF | Reverse Transfer Capacitance |
| Qg | 346 | nC | Gate charge |
| td(on) @ TJ=25 | 25 | ns | Turn-on Delay Time |
| tr @ TJ=25 | 28 | ns | Rise Time |
| td(off) @ TJ=25 | 262 | ns | Turn-Off Delay Time |
| tf @ TJ=25 | 149 | ns | Fall Time |
| Eon @ TJ=25 | 1.30 | mJ | Turn-On Switching Loss |
| Eoff @ TJ=25 | 2.30 | mJ | Turn-Off Switching Loss |
| Ets @ TJ=25 | 3.60 | mJ | Total Switching Loss |
| td(on) @ TJ=175 | 26 | ns | Turn-on Delay Time |
| tr @ TJ=175 | 35 | ns | Rise Time |
| td(off) @ TJ=175 | 331 | ns | Turn-Off Delay Time |
| tf @ TJ=175 | 224 | ns | Fall Time |
| Eon @ TJ=175 | 2.20 | mJ | Turn-On Switching Loss |
| Eoff @ TJ=175 | 3.70 | mJ | Turn-Off Switching Loss |
| Ets @ TJ=175 | 5.90 | mJ | Total Switching Loss |
| Trr @ TJ=25 | 94 | ns | Reverse Recovery Time |
| Qrr @ TJ=25 | 225 | nC | Reverse Recovery Charge |
| Irrm @ TJ=25 | 9.7 | A | Reverse Recovery Current |
| Trr @ TJ=175 | 125 | ns | Reverse Recovery Time |
| Qrr @ TJ=175 | 277 | nC | Reverse Recovery Charge |
| Irrm @ TJ=175 | 11.2 | A | Reverse Recovery Current |
Applications
- PTC
- Motor drives
- OBC
Package Information
| Symbol | Min | Nom | Max | Unit |
|---|---|---|---|---|
| A | 4.80 | 5.00 | 5.20 | mm |
| A1 | 2.21 | 2.41 | 2.59 | mm |
| A2 | 1.85 | 2.00 | 2.15 | mm |
| b | 1.11 | 1.21 | 1.36 | mm |
| b2 | 1.91 | 2.01 | 2.21 | mm |
| b4 | 2.91 | 3.01 | 3.21 | mm |
| c | 0.51 | 0.61 | 0.75 | mm |
| D | 20.70 | 21.00 | 21.30 | mm |
| D1 | 16.25 | 16.55 | 16.85 | mm |
| E | 15.50 | 15.80 | 16.10 | mm |
| E1 | 13.00 | 13.30 | 13.60 | mm |
| E2 | 4.80 | 5.00 | 5.20 | mm |
| E3 | 2.30 | 2.50 | 2.70 | mm |
| e | 5.44 | BSC | ||
| L | 19.62 | 19.92 | 20.22 | mm |
| L1 | 4.30 | mm | ||
| P | 3.40 | 3.60 | 3.80 | mm |
| P1 | 7.30 | mm | ||
| S | 6.15 | BSC |
2509181737_HXY-MOSFET-IRG7PH46UD-EP-HXY_C49003327.pdf
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