Power transistor HXY MOSFET IGW50N60TP designed for UPS EV charger and solar string inverter systems
Key Attributes
Model Number:
IGW50N60TP-HXY
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
110ns
Td(on):
17ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
1.916nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@0.25mA
Gate Charge(Qg):
71nC@15V
Reverse Recovery Time(trr):
56ns
Switching Energy(Eoff):
510uJ
Turn-On Energy (Eon):
1.35mJ
Mfr. Part #:
IGW50N60TP-HXY
Package:
TO-247
Product Description
Product Overview
The IGW50N60TP is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key features include a maximum junction temperature of 175C and suitability for UPS, EV-Charger, and Solar String Inverter applications.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: IGW50N60TP
- Package: TO-247
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | 650 | V | |||
| IC | DC collector current(1) | TC = 25C | 80 | A | ||
| IC | DC collector current(1) | TC = 100C | 50 | A | ||
| ICM | Pulsed collector current | TC = 25C | 200 | A | ||
| IF | Maximum Diode forward current(1) | TC = 25C | 80 | A | ||
| IF | Maximum Diode forward current(1) | TC = 100C | 50 | A | ||
| IFM | Diode pulsed current | TC = 25C | 200 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| VGE | Transient Gate-Emitter Voltage | (tp 10s, D < 0.010), TVJ = 25C | 30 | V | ||
| Ptot | Power Dissipation | TC = 25C | 250 | W | ||
| Ptot | Power Dissipation | TC = 100C | 129 | W | ||
| TVJ | Operating Junction Temperature Range | -40 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Resistance | ||||||
| RJA | Thermal resistance: junction - ambient | 40 | C/W | |||
| RJC | IGBT Thermal resistance: junction - case | IGBT | 0.65 | C/W | ||
| RJC | Diode Thermal resistance: junction - case | Diode | 0.58 | C/W | ||
| Electrical Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 650 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A | 1.6 | 2.1 | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A ,TVJ = 125C | 1.93 | - | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A ,TVJ = 175C | 2.0 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 50A | 1.85 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 50A ,TVJ = 125C | 1.6 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 50A ,TVJ = 175C | 1.45 | - | V | |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 3.2 | 4 | 4.8 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - | - | 50 | mA |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - | - | 100 | nA |
| gfs | Transconductance | VGE = 20V, IC = 50A | - | 56 | - | S |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | - | 1916 | - | pF |
| Coes | Output Capacitance | - | 139 | - | pF | |
| Cres | Reverse Transfer Capacitance | - | 13 | - | pF | |
| Qg | Gate Charge | VGE = 0 to 15V, VCE = 520V, IC = 50A | - | 71 | - | nC |
| Qge | Gate to Emitter charge | - | 10 | - | nC | |
| Qgc | Gate to Collector charge | - | 21 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-On DelayTime | VGE = 15V, VCC = 400V, IC= 50A, RG(off) = 12,RG(on) = 12 | - | 17 | - | ns |
| tr | Turn-On Rise Time | - | 30 | - | ns | |
| td(off) | Turn-Off DelayTime | - | 110 | - | ns | |
| tf | Turn-Off Fall Time | - | 34 | - | ns | |
| Eon | Turn-on energy | - | 1.35 | - | mJ | |
| Eoff | Turn-off energy | - | 0.51 | - | mJ | |
| Ets | Total switching energy | - | 1.86 | - | mJ | |
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | VR = 400 V, IF = 50 A, di/dt = 400 A/S | - | 56 | - | ns |
| Qrr | Reverse recovery charge | - | 0.27 | - | mC | |
| Irrm | Peak reverse recovery current | - | 8 | - | A | |
2509181739_HXY-MOSFET-IGW50N60TP-HXY_C49003466.pdf
Related Products
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
