IGBT device HXY MOSFET IXYH120N65C3-HXY designed for string inverters UPS and electric vehicle charging systems
Key Attributes
Model Number:
IXYH120N65C3-HXY
Product Custom Attributes
Td(off):
195ns
Pd - Power Dissipation:
429W
Td(on):
27ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
26pF
Input Capacitance(Cies):
3.452nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@0.88mA
Gate Charge(Qg):
156nC@15V
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
223pF
Reverse Recovery Time(trr):
123ns
Switching Energy(Eoff):
1.65mJ
Turn-On Energy (Eon):
3.3mJ
Mfr. Part #:
IXYH120N65C3-HXY
Package:
TO-247
Product Description
Product Overview
The IXYH120N65C3 is an Insulated Gate Bipolar Transistor (IGBT) featuring high input impedance, low saturation voltage, and low switching losses, contributing to high efficiency. It offers rugged transient reliability and low EMI, making it suitable for industrial applications such as UPS, EV-charging, string inverters, and welding.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Model: IXYH120N65C3
- Website: www.hxymos.com
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Key Performance and Package Parameters | ||||||
| TVjmax | Maximum Rating | Absolute | 175 | C | ||
| VC | Collector emitter voltage | TVJ = 25C | 650 | V | ||
| IC | DC collector current,limited by Tvjmax | TC = 25C | 150 | A | ||
| IC | DC collector current,limited by Tvjmax | TC = 100C | 100 | A | ||
| ICpul | Pulsed collector current,limited by Tvjmax | 300 | A | |||
| IF | Maximum Diode forward current, limited by Tvjmax | TC = 25C | 150 | A | ||
| IF | Maximum Diode forward current, limited by Tvjmax | TC = 100C | 100 | A | ||
| IFpul | Diode pulsed current, limited by Tvjmax | 300 | A | |||
| VG E | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| Pto | Power Dissipation | TC = 25C | 429 | W | ||
| Pto | Power Dissipation | TC = 100C | 214 | W | ||
| TV J | Operating Junction Temperature Range | -55 | +175 | C | ||
| TST G | Storage Temperature Range | -55 | +175 | C | ||
| TvjO | Temperature under switching conditions | -40 | +150 | C | ||
| Thermal Resistance | ||||||
| RthJC | IGBT Thermal resistance: junction - case | 0.25 | 0.35 | C/W | ||
| RthJC | Diode Thermal resistance: junction - case | 0.28 | 0.38 | C/W | ||
| Static Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 1mA , TVJ = 25C | 650 | V | ||
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 100A ,TVJ = 25C | 1.45 | V | ||
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 100A ,TVJ = 175C | 1.75 | V | ||
| VF | Diode forward voltage | VGE = 0V , IC = 100A ,TVJ = 25C | 1.55 | V | ||
| VF | Diode forward voltage | VGE = 0V , IC = 100A ,TVJ = 175C | 1.6 | V | ||
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 0.88mATVJ = 25C | 4 | V | ||
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0VTVJ = 25C | 100 | mA | ||
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | 100 | nA | ||
| IGES | Gate-Emitter leakage current | VGE = -20V, VCE = 0V | -100 | nA | ||
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 100K Hz | 3452 | pF | ||
| Coes | Output Capacitance | 223 | pF | |||
| Cres | Reverse Transfer Capacitance | 26 | pF | |||
| Qg | Gate Charge | VGE = 0 to 15V VCE = 520V, IC = 100A | 156 | nC | ||
| Switching Characteristics (TVj = 25 C) | ||||||
| td(on) | Turn-On Delay Time | VCE = 400 V, IC = 100 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | 27 | ns | ||
| tr | Turn-On Rise Time | 58 | ns | |||
| td(off) | Turn-Off Delay Time | 195 | ns | |||
| tf | Turn-Off Fall Time | 66 | ns | |||
| Eon | Turn-on energy | 3.3 | mJ | |||
| Eoff | Turn-off energy | 1.65 | mJ | |||
| Ets | Total switching energy | 4.35 | mJ | |||
| Switching Characteristics (TVj = 175 C) | ||||||
| td(on) | Turn-On Delay Time | VCE = 400 V, IC = 100 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | 27 | ns | ||
| tr | Turn-On Rise Time | 50 | ns | |||
| td(off) | Turn-Off Delay Time | 215 | ns | |||
| tf | Turn-Off Fall Time | 58 | ns | |||
| Eon | Turn-on energy | 3.77 | mJ | |||
| Eoff | Turn-off energy | 2.07 | mJ | |||
| Ets | Total switching energy | 5.84 | mJ | |||
| Diode Recovery Characteristics (TVj = 25 C) | ||||||
| Trr | Reverse recovery time | VCE = 400 V, IC = 100 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | 123 | ns | ||
| Qrr | Reverse recovery charge | 1.95 | mC | |||
| Irrm | Peak reverse recovery current | 30.8 | A | |||
| Erec | Reverse recovery energy | 0.47 | mJ | |||
| Diode Recovery Characteristics (TVj = 175 C) | ||||||
| Trr | Reverse recovery time | VCE = 400 V, IC = 100 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | 150 | ns | ||
| Qrr | Reverse recovery charge | 3.85 | mC | |||
| Irrm | Peak reverse recovery current | 44.1 | A | |||
| Erec | Reverse recovery energy | 0.98 | mJ | |||
2509181738_HXY-MOSFET-IXYH120N65C3-HXY_C49003440.pdf
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