Trench FS IGBT Half Bridge Module JIAENSEMI GN300HF120T1SZ1 1200V 300A for AC Servo Drive Amplifiers

Key Attributes
Model Number: GN300HF120T1SZ1
Product Custom Attributes
Td(off):
522ns
Pd - Power Dissipation:
1.344kW
Td(on):
163ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.46nF
Input Capacitance(Cies):
59.2nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@11.4mA
Operating Temperature:
-40℃~+150℃
Pulsed Current- Forward(Ifm):
600A
Output Capacitance(Coes):
1.55nF
Switching Energy(Eoff):
29.1mJ
Turn-On Energy (Eon):
14.2mJ
Mfr. Part #:
GN300HF120T1SZ1
Product Description

Product Overview

The JIAEN GN300HF120T1SZ1 is a 1200V, 300A Trench FS IGBT Half Bridge Module designed for general inverter and soft switching applications. It offers lower losses and higher energy efficiency, making it suitable for motor drives, AC and DC servo drive amplifiers, and power supplies. Key features include a low VCE(sat) of 1.6V (typ.), soft turn-off capability, a positive VCE(on) temperature coefficient, and ease of paralleling.

Product Attributes

  • Brand: JIAEN
  • Model: GN300HF120T1SZ1
  • Module Baseplate Material: Cu
  • Internal Isolation Material: Al2O3
  • Certifications: Basic insulation (class 1, IEC 61140)

Technical Specifications

ParameterSymbolValueUnitsTest Conditions
IGBT Maximum Rated Values
Collector-Emitter VoltageVCES1200V
Gate-Emitter VoltageVGES+ 20V
Continuous Collector CurrentIC300A( TC=70,Tvj max=150)
Repetitive Peak Collector CurrentICRM600A(tp= 1 ms)
Maximum Power DissipationPD1344W( TC=25,Tvj max=150)
IGBT Characteristics
Collector-Emitter Saturation VoltageVCE(sat)1.6VVGE=15V, IC=300A, Tvj=25
Collector-Emitter Saturation VoltageVCE(sat)1.9VVGE=15V, IC=300A, Tvj=150
Gate Threshold VoltageVGE(th)5.0 - 6.6VVGE=VCE, IC=11.4mA
Total Gate ChargeQg2.03uCVGE=-15V+15V
Input CapacitanceCies59.2nFVCE=25V, VGE=0V, f=100KHz
Output CapacitanceCoes1.55nF
Reverse Transfer CapacitanceCres0.46nF
Collector-Emitter Leakage CurrentICES2.0mAVCE=1200V, VGE=0V
Gate Leakage Current, ForwardIGES200nAVGE=20V, VCE=0V
Gate Leakage Current, ReverseIGES-200nAVGE=-20V, VCE=0V
Turn-on Delay Timetd(on)163nsVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=25
Turn-on Rise Timetr114nsVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=25
Turn-off Delay Timetd(off)522nsVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=25
Turn-off Fall Timetf168nsVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=25
Turn-on Switching LossEon14.2mJVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=25
Turn-off Switching LossEoff29.1mJVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=25
Total Switching LossEts43.3mJVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=25
Turn-on Delay Timetd(on)175nsVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=125
Turn-on Rise Timetr122nsVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=125
Turn-off Delay Timetd(off)574nsVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=125
Turn-off Fall Timetf259nsVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=125
Turn-on Switching LossEon22.7mJVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=125
Turn-off Switching LossEoff36.8mJVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=125
Total Switching LossEts59.5mJVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=125
Turn-on Delay Timetd(on)176nsVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=150
Turn-on Rise Timetr125nsVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=150
Turn-off Delay Timetd(off)587nsVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=150
Turn-off Fall Timetf291nsVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=150
Turn-on Switching LossEon23.5mJVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=150
Turn-off Switching LossEoff39.0mJVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=150
Total Switching LossEts62.5mJVCC=600V, VGE=15V, IC=300A, RG=3, Inductive Load, Tvj=150
Short circuit currentIsc1000AVGE=15V, Tp10us, Tvj=150, Vcc=600V, VCEM Chip1200V
Thermal resistance, junction to caseRth j-c0.093K/W
Temperature under switching conditionTvj op-40 - 150
Diode Maximum Rated Values
Repetitive peak reverse voltageVRRM1200V
Continuous DC Forward CurrentIF300A
Repetitive Peak Collector CurrentIFRM600A(tp=1ms)
Diode Characteristics
Diode Forward VoltageVF2.7 - 3.2VIF=300A, VGE=0V, Tvj=25
Diode Forward VoltageVF1.9VIF=300A, VGE=0V, Tvj=150
Peak reverse recovery currentIRM112AIC=300A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=25
Diode Reverse Recovery ChargeQrr8.7uCIC=300A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=25
Reverse recovery energyErec6.7mJIC=300A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=25
Peak reverse recovery currentIRM191AIC=300A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=125
Diode Reverse Recovery ChargeQrr26.1uCIC=300A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=125
Reverse recovery energyErec13.5mJIC=300A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=125
Peak reverse recovery currentIRM215AIC=300A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=150
Diode Reverse Recovery ChargeQrr32.7uCIC=300A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=150
Reverse recovery energyErec15.6mJIC=300A, VR=600V, -di/dt=2500A/us, VGE=15V, Tvj=150
Thermal resistance, junction to caseRth j-c0.15K/W
Temperature under switching conditionTvj op-40 - 150
Module Isolation and Mounting
Isolation test voltage RMSVISOL4.0kVf=50 Hz, t=1 min
Clearance distance in air (Terminal to terminal)10mm
Surface creepage distance (Terminal to terminal)13mm
Comperative tracking indexCTI>200
Storage temperatureTstg-40~150
Mounting torque for module mounting (M6 screws)3~6Nm

2509021810_JIAENSEMI-GN300HF120T1SZ1_C51484292.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.