High Current Capability HXY MOSFET AOKS40B65H1 with Maximum Junction Temperature of 175C and Low EMI
Key Attributes
Model Number:
AOKS40B65H1
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
136ns
Td(on):
26ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
11pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@250uA
Gate Charge(Qg):
57nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
56ns
Switching Energy(Eoff):
430uJ
Turn-On Energy (Eon):
900uJ
Input Capacitance(Cies):
1.52nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
110pF
Mfr. Part #:
AOKS40B65H1
Package:
TO-247
Product Description
Product Overview
The AOKS40B65H1 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, it is suitable for UPS, EV-Charger, and Solar String Inverter applications.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: AOKS40B65H1
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: TO-247
- Packing: 30PCS
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | 650 | V | |||
| IC | DC collector current(1) | TC = 25C | 70 | A | ||
| IC | DC collector current(1) | TC = 100C | 40 | A | ||
| ICM | Pulsed collector current | TC = 25C | 160 | A | ||
| IF | Maximum Diode forward current(1) | TC = 25C | 70 | A | ||
| IF | Maximum Diode forward current(1) | TC = 100C | 40 | A | ||
| IFM | Diode pulsed current | TC = 25C | 160 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| VGE | Transient Gate-Emitter Voltage | (tp 10s, D < 0.010) TVJ = 25C | 30 | V | ||
| Ptot | Power Dissipation | TC = 25C | 250 | W | ||
| Ptot | Power Dissipation | TC = 100C | 125 | W | ||
| TVJ | Operating Junction Temperature Range | -40 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Resistance | ||||||
| RJA | Thermal resistance: junction - ambient | 40 | C/W | |||
| RJC | Thermal resistance: junction - case IGBT | 0.6 | C/W | |||
| RJC | Thermal resistance: junction - case Diode | 0.65 | C/W | |||
| Electrical Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 650 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A | 1.6 | 2.1 | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A ,TVJ = 125C | 1.85 | - | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A ,TVJ = 175C | 1.95 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC =40A | 1.8 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC =40A ,TVJ = 125C | 1.5 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 40A ,TVJ = 175C | 1.35 | - | V | |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 3.2 | 4 | 4.8 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - | - | 40 | mA |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - | - | 100 | nA |
| gfs | Transconductance | VGE =15V, IC = 40A | - | 55 | - | S |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | - | 1520 | - | pF |
| Coes | Output Capacitance | - | 110 | - | pF | |
| Cres | Reverse Transfer Capacitance | - | 11 | - | pF | |
| Qg | Gate Charge | VGE = 0 to 15V VCE = 520V, IC = 40A | - | 57 | - | nC |
| Qge | Gate to Emitter charge | - | 6.5 | - | nC | |
| Qgc | Gate to Collector charge | - | 17.5 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-On DelayTime | VGE = 15V, VCC = 400V IC= 40A, RG(on) =15,RG(off) =15 | - | 26 | - | ns |
| tr | Turn-On Rise Time | - | 28 | - | ns | |
| td(off) | Turn-Off DelayTime | - | 136 | - | ns | |
| tf | Turn-Off Fall Time | - | 34 | - | ns | |
| Eon | Turn-on energy | - | 0.9 | - | mJ | |
| Eoff | Turn-off energy | - | 0.43 | - | mJ | |
| Ets | Total switching energy | - | 1.33 | - | mJ | |
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | VR = 400 V, IF = 40 A, di/dt = 400 A/S | - | 56 | - | ns |
| Qrr | Reverse recovery charge | - | 0.27 | - | mC | |
| Irrm | Peak reverse recovery current | - | 8.0 | - | A | |
2509181602_HXY-MOSFET-AOKS40B65H1_C49003451.pdf
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