Industrial power transistor JIAENSEMI JNG30N120HS3 for UPS and soft current turn off applications

Key Attributes
Model Number: JNG30N120HS3
Product Custom Attributes
Td(off):
300ns
Pd - Power Dissipation:
200W
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
170pF
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Operating Temperature:
-55℃~+150℃
Reverse Recovery Time(trr):
210ns
Switching Energy(Eoff):
2.33mJ
Turn-On Energy (Eon):
1.62mJ
Input Capacitance(Cies):
1.6nF
Pulsed Current- Forward(Ifm):
100A
Output Capacitance(Coes):
270pF
Mfr. Part #:
JNG30N120HS3
Package:
TO-247
Product Description

Product Overview

The JIAEN JNG30N120HS3 is an NPT IGBT designed for high efficiency and lower losses in applications such as induction heating (IH), UPS, and general inverters, particularly those employing soft switching techniques. It offers high-speed switching capabilities and soft current turn-off waveforms.

Product Attributes

  • Brand: JIAEN
  • Technology: NPT

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Units
Absolute Maximum RatingsVCES1200V
VGES+30V
IC (TC=25)50A
IC (TC=100)30A
Electrical Characteristics (IGBT)BVCESVGE= 0V, IC= 250uA1200--V
ICESVCE= 1200V, VGE= 0V--250uA
IGESVGE=30V, VCE= 0V--100nA
VGE(th)VGE= VCE, IC= 250uA4.05.06.0V
VCE(sat)VGE=15V, IC= 30A-2.22.6V
QgVCC=960V VGE=15V IC=30A-165-nC
td(on)VCC=600V VGE=15V IC=30A RG=10 Inductive Load TC=25 -25-ns
tr-40-ns
td(off)-300-ns
tf-170-ns
Eon-1.62-mJ
Eoff-2.33-mJ
Ets-3.95-mJ
CapacitanceCiesVCE=25V VGE=0V f = 1MHz-1600-pF
Coes-270-pF
Cres-170-pF
Diode CharacteristicsVFIF=30A-2.152.7V
trrVCE = 600V IF= 30A dIF/dt = 500A/us-210-ns
Qrr-2100-nC
Thermal CharacteristicsRth j-c (IGBT)0.48/ W
Rth j-c (Diode)0.95/ W

2509021810_JIAENSEMI-JNG30N120HS3_C51484269.pdf

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