rugged JIAENSEMI JNG15T120HIRU2 trench IGBT module for motor drives UPS and portable power stations
Key Attributes
Model Number:
JNG15T120HIRU2
Product Custom Attributes
Td(off):
131ns
Pd - Power Dissipation:
175W
Td(on):
19ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
11pF
Input Capacitance(Cies):
1.32nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Operating Temperature:
-55℃~+175℃
Pulsed Current- Forward(Ifm):
45A
Output Capacitance(Coes):
57pF
Reverse Recovery Time(trr):
130ns
Switching Energy(Eoff):
900uJ
Turn-On Energy (Eon):
1.1mJ
Mfr. Part #:
JNG15T120HIRU2
Package:
TO-247
Product Description
Product Overview
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Motor drives, PFC, Portable power stations, and other soft switching applications. These devices provide reliable and rugged performance with fast switching capabilities.
Product Attributes
- Brand: JIAEN
- Certifications: Halogen Free and Green Devices Available
Technical Specifications
| Parameter | Value | Units | Conditions |
| Absolute Maximum Ratings | |||
| Collector-Emitter Voltage (VCES) | 1200 | V | |
| Gate-Emitter Voltage (VGES) | + 20 | V | |
| Continuous Collector Current (IC) | 30 | A | TC=25 |
| Continuous Collector Current (IC) | 15 | A | TC=100 |
| Pulsed Collector Current (ICM) | 45 | A | Note 1 |
| Diode Continuous Forward Current (IF) | 15 | A | TC=100 |
| Diode Maximum Forward Current (IFM) | 45 | A | Note 1 |
| Short Circuit Withstand Time (tsc) | 5 | us | |
| Maximum Power Dissipation (PD) | 175 | W | TC=25 |
| Operating Junction Temperature Range (TJ) | -55 to +175 | ||
| Thermal Characteristics | |||
| Thermal Resistance, Junction to case for IGBT (Rth j-c) | 0.85 | / W | |
| Thermal Resistance, Junction to case for Diode (Rth j-c) | 1.5 | / W | |
| Thermal Resistance, Junction to Ambient (Rth j-a) | 40 | / W | |
| Electrical Characteristics (IGBT) | |||
| Collector-Emitter Breakdown Voltage (BVCES) | 1200 | V | VGE= 0V, IC= 1mA |
| Collector-Emitter Leakage Current (ICES) | 100 | uA | VCE= 1200V, VGE= 0V |
| Gate Leakage Current, Forward (IGES) | + 200 | nA | VGE= + 20V, VCE= 0V |
| Gate Threshold Voltage (VGE(th)) | 5.0 - 7.0 | V | VGE= VCE, IC= 1mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.75 | V | VGE=15V, IC= 15A |
| Total Gate Charge (Qg) | 70 | nC | VCC=600V, VGE=15V, IC=15A |
| Turn-on Delay Time (td(on)) | 19 | ns | VCC=600V, VGE=15V, IC=15A, RG=15, Inductive Load, TC=25 |
| Turn-on Rise Time (tr) | 20 | ns | |
| Turn-off Delay Time (td(off)) | 131 | ns | |
| Turn-off Fall Time (tf) | 210 | ns | |
| Turn-on Switching Loss (Eon) | 1.1 | mJ | |
| Turn-off Switching Loss (Eoff) | 0.9 | mJ | |
| Total Switching Loss (Ets) | 2.0 | mJ | |
| Input Capacitance (Cies) | 1320 | pF | VCE=25V, VGE=0V, f = 1MHz |
| Output Capacitance (Coes) | 57 | pF | |
| Reverse Transfer Capacitance (Cres) | 11 | pF | |
| Electrical Characteristics of Diode | |||
| Diode Forward Voltage (VF) | 2.1 - 3.5 | V | IF=15A |
| Diode Reverse Recovery Time (trr) | 130 | ns | VCE = 600V, IF= 15A, diF/dt = 200A/us |
| Diode peak Reverse Recovery Current (Irr) | 4.8 | A | |
| Diode Reverse Recovery Charge (Qrr) | 220 | nC | |
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2509021810_JIAENSEMI-JNG15T120HIRU2_C51484283.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
