switching component JIAENSEMI JNG60T65HJU1 Trench IGBT for UPS and soft switching power electronics
Key Attributes
Model Number:
JNG60T65HJU1
Product Custom Attributes
Td(off):
166ns
Pd - Power Dissipation:
394W
Td(on):
44ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
30pF
Input Capacitance(Cies):
3.86nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
240A
Output Capacitance(Coes):
170pF
Reverse Recovery Time(trr):
78ns
Switching Energy(Eoff):
1.3mJ
Turn-On Energy (Eon):
2.3mJ
Mfr. Part #:
JNG60T65HJU1
Package:
TO-247
Product Description
Product Overview
The JNG60T65HJU1 is a Trench IGBT from JIAEN Semiconductor, designed for high-speed switching applications. It offers lower losses and higher energy efficiency, making it suitable for UPS, induction converters, uninterruptible power supplies, and other soft switching applications. Key features include soft current turn-off waveforms and a square RBSOA.
Product Attributes
- Brand: JIAEN
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Value | Units | Conditions |
| Collector-Emitter Voltage (VCES) | 650 | V | |
| Gate-Emitter Voltage (VGES) | +20 | V | |
| Continuous Collector Current (IC) | 120 | A | TC=25 |
| Continuous Collector Current (IC) | 60 | A | TC=100 |
| Pulsed Collector Current (ICM) | 240 | A | Note 1 |
| Diode Continuous Forward Current (IF) | 60 | A | TC=100 |
| Diode Maximum Forward Current (IFM) | 240 | A | Note 1 |
| Maximum Power Dissipation (PD) | 394 | W | TC=25 |
| Maximum Power Dissipation (PD) | 197 | W | TC=100 |
| Operating Junction Temperature Range (TJ) | -40 to +175 | ||
| Storage Temperature Range (TSTG) | -55 to +150 | ||
| Thermal Resistance, Junction to case (Rth j-c) for IGBT | 0.38 | / W | |
| Thermal Resistance, Junction to case (Rth j-c) for Diode | 0.5 | / W | |
| Thermal Resistance, Junction to Ambient (Rth j-a) | 40 | / W | |
| Collector-Emitter Breakdown Voltage (BVCES) | 650 | V | VGE= 0V, IC= 250uA |
| Collector-Emitter Leakage Current (ICES) | 50 | uA | VCE= 650V, VGE= 0V |
| Gate Leakage Current, Forward (IGES) | 100 | nA | VGE=20V, VCE= 0V |
| Gate Threshold Voltage (VGE(th)) | 5.0 to 6.0 | V | VGE= VCE, IC= 1mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.9 | V | VGE=15V, IC= 60A |
| Total Gate Charge (Qg) | 120 | nC | VCC=520V VGE=15V IC=60A |
| Turn-on Delay Time (td(on)) | 44 | ns | VCC=400V VGE=15V IC=60A RG=10 Inductive Load TC=25 |
| Turn-on Rise Time (tr) | 100 | ns | |
| Turn-off Delay Time (td(off)) | 166 | ns | |
| Turn-off Fall Time (tf) | 75 | ns | |
| Turn-on Switching Loss (Eon) | 2.3 | mJ | |
| Turn-off Switching Loss (Eoff) | 1.3 | mJ | |
| Total Switching Loss (Ets) | 3.6 | mJ | |
| Input Capacitance (Cies) | 3860 | pF | VCE=30V VGE=0V f = 1MHz |
| Output Capacitance (Coes) | 170 | pF | |
| Reverse Transfer Capacitance (Cres) | 30 | pF | |
| Diode Forward Voltage (VF) | 1.7 | V | IF= 60A |
| Diode Reverse Recovery Time (trr) | 78 | ns | VCE = 400V IF= 60A dif/dt= 450A/ns |
| Diode peak Reverse Recovery Current (Irr) | 14 | A | |
| Diode Reverse Recovery Charge (Qrr) | 600 | nC |
2509021810_JIAENSEMI-JNG60T65HJU1_C51484261.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
