Power IGBT transistor HXY MOSFET IKW50N65H5-HXY with 650V voltage and 100A collector current rating
Key Attributes
Model Number:
IKW50N65H5-HXY
Product Custom Attributes
Td(off):
122ns
Td(on):
24ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
92pF
Input Capacitance(Cies):
3.363nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@1mA
Gate Charge(Qg):
179nC@15V
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
206pF
Reverse Recovery Time(trr):
98ns
Switching Energy(Eoff):
1.14mJ
Turn-On Energy (Eon):
1.38mJ
Mfr. Part #:
IKW50N65H5-HXY
Package:
TO-247
Product Description
Product Overview
The IKW50N65H5 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high efficiency and reliability.
Product Attributes
- Brand: HUAXUANYANG
- Model: IKW50N65H5
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Certifications: Halogen Free and Green Devices Available (RoHS Compliant)
Technical Specifications
| Parameter | Value | Unit | Description |
|---|---|---|---|
| VCES | 650 | V | Collector-Emitter Voltage |
| IC (@TC=25C) | 100 | A | Collector Current |
| IC (@TC=100C) | 50 | A | Collector Current |
| ICM | 200 | A | Pulsed Collector Current, tp limited by TJmax |
| VCE(sat).typ | 1.65 | V | Collector-Emitter Saturation Voltage (typ.) |
| PD (@TC=25C) | 300 | W | Power Dissipation |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.50 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.65 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| VGE(TH) | 4.5 - 6.5 | V | Gate Threshold Voltage (min. - max.) |
| VF (@IF=50A, TJ=25C) | 1.45 - 1.85 | V | Diode Forward Voltage (min. - max.) |
| ICES (@VCE=650V, VGE=0V) | -- | A | Collector-Emitter Leakage Current (max.) |
| Cies (@VGE=0V, VCE=25V, f=1.0MHz) | 3363 | pF | Input Capacitance (typ.) |
| Qg (@VCC=520V, ICE=50A, VGE=15V) | 179 | nC | Gate charge (typ.) |
| td(on) (@IC=50A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25C) | 24 | ns | Turn-on Delay Time (typ.) |
| Eon (@IC=50A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25C) | 1.38 | mJ | Turn-On Switching Loss (typ.) |
| Trr (@IF=50A, VCC=400V, di/dt=200A/s, TJ=25C) | 98 | ns | Reverse Recovery Time (typ.) |
| Qrr (@IF=50A, VCC=400V, di/dt=200A/s, TJ=25C) | 1580 | C | Reverse Recovery Charge (typ.) |
Features
- Positive temperature coefficient
- Fast Switching
- Low VCE(sat)
- Reliable and Rugged
- Halogen Free and Green Devices Available (RoHS Compliant)
Applications
- UPS
- Motor drives
- Boost
- Portable power station
Package Information
Package Type: TO-247
Device Per Unit:
| Package Type | Unit | Quantity |
|---|---|---|
| TO-247 | Tube | 30 |
2509181737_HXY-MOSFET-IKW50N65H5-HXY_C49003404.pdf
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