power switching JIAENSEMI JNG40T65HJU1 IGBT 650V 40A trench technology for industrial applications
Key Attributes
Model Number:
JNG40T65HJU1
Product Custom Attributes
Pd - Power Dissipation:
300W
Td(off):
110ns
Td(on):
32ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
21pF
Input Capacitance(Cies):
2.48nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@1mA
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
95pF
Reverse Recovery Time(trr):
130ns
Switching Energy(Eoff):
600uJ
Turn-On Energy (Eon):
1.2mJ
Mfr. Part #:
JNG40T65HJU1
Package:
TO-247
Product Description
Product Overview
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Induction converters, Uninterruptible power supplies, and other soft switching applications. The JNG40T65HJU1 features a 650V, 40A rating with a typical VCE(sat) of 1.7V at VGE=15V and IC=40A. Its high-speed switching capability and Trench and Field-Stop technology contribute to higher system efficiency and easy parallel switching.
Product Attributes
- Brand: JIAEN
- Model: JNG40T65HJU1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| IGBT Electrical Characteristics | BVCES | VGE= 0V, IC= 250uA | 650 | - | - | V |
| ICES | VCE= 650V, VGE= 0V | - | - | 100 | uA | |
| IGES | VGE=20V, VCE= 0V | - | - | �b1;100 | nA | |
| VGE(th) | VGE= VCE, IC=1mA | 4.0 | 5.0 | 6.0 | V | |
| VCE(sat) | VGE=15V, IC= 40A | - | 1.7 | - | V | |
| Qg | VCC=520V VGE=15V IC=40A | - | 78 | - | nC | |
| td(on) | VCC=400V VGE=15V IC=40A RG=10Ω Inductive Load TC=25 ℃ | - | 32 | - | ns | |
| tr | - | 59 | - | ns | ||
| td(off) | - | 110 | - | ns | ||
| tf | - | 52 | - | ns | ||
| Eon | - | 1.2 | - | mJ | ||
| Eoff | - | 0.6 | - | mJ | ||
| Ets | - | 1.8 | - | mJ | ||
| Cies | VCE=30V VGE=0V f = 1MHz | - | 2480 | - | pF | |
| Coes | - | 95 | - | pF | ||
| Cres | - | 21 | - | pF | ||
| Diode Electrical Characteristics | VF | IF=40A | - | 1.5 | - | V |
| trr | VCE = 400V IF= 40A Dif/dt=1200A/us | - | 130 | - | ns | |
| IRR | - | 42 | - | A | ||
| Qr r | - | 3520 | - | nC |
2509121150_JIAENSEMI-JNG40T65HJU1_C51484256.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
