High Current IGBT HXY MOSFET RJH1CV7DPQ-HXY Semiconductor Device With Avalanche Energy Capability
Key Attributes
Model Number:
RJH1CV7DPQ-HXY
Product Custom Attributes
Pd - Power Dissipation:
441W
Td(off):
262ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
346nC@15V
Reverse Recovery Time(trr):
94ns
Switching Energy(Eoff):
2.3mJ
Turn-On Energy (Eon):
1.3mJ
Input Capacitance(Cies):
3.98nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
157pF
Mfr. Part #:
RJH1CV7DPQ-HXY
Package:
TO-247
Product Description
Product Overview
The RJH1CV7DPQ is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is designed for applications requiring high reliability and efficiency, offering a positive temperature coefficient, fast switching speeds, low VCE(sat), and a rugged construction. The device is AEC-Q101 qualified and operates at temperatures up to 175, with halogen-free and green options available.
Product Attributes
- Brand: HUAXUANYANG
- Model: RJH1CV7DPQ
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Certifications: AEC-Q101 Qualified, RoHS Compliant
- Package Type: TO-247
- Material: Halogen Free and Green Devices Available
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC | 40 | A | Collector Current @TC=100C |
| IC (Peak @TC=25C) | 80 | A | Collector Current @TC=25C |
| ICM | 160 | A | Pulsed Collector Current, tp limited by TJmax |
| VCE(sat).typ | 1.70 | V | Collector-Emitter Saturation Voltage (Typ. @TJ=25) |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage |
| VF | 1.61 - 2.25 | V | Diode Forward Voltage |
| ICES | -- | A | Collector-Emitter Leakage Current @VCE=1200V, VGE=0V |
| IGES(F) | -- | nA | Gate-Emitter Forward Leakage Current @VGE=+20V |
| IGES(R) | -- | nA | Gate-Emitter Reverse Leakage Current @VGE=-20V |
| PD @TC=25C | 441 | W | Power Dissipation |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.80 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| Cies | 3980 | pF | Input Capacitance |
| Coes | 157 | pF | Output Capacitance |
| Cres | 93 | pF | Reverse Transfer Capacitance |
| Qg | 346 | nC | Gate charge |
| td(on) (TJ=25) | 25 | ns | Turn-on Delay Time |
| tr (TJ=25) | 28 | ns | Rise Time |
| td(off) (TJ=25) | 262 | ns | Turn-Off Delay Time |
| tf (TJ=25) | 149 | ns | Fall Time |
| Eon (TJ=25) | 1.30 | mJ | Turn-On Switching Loss |
| Eoff (TJ=25) | 2.30 | mJ | Turn-Off Switching Loss |
| Ets (TJ=25) | 3.60 | mJ | Total Switching Loss |
| Trr (TJ=25) | 94 | ns | Reverse Recovery Time |
| Qrr (TJ=25) | 225 | nC | Reverse Recovery Charge |
| Irrm (TJ=25) | 9.7 | A | Reverse Recovery Current |
2509181737_HXY-MOSFET-RJH1CV7DPQ-HXY_C49003398.pdf
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