Powerful HXY MOSFET RGWS00TS65GC13-HXY 650V 50A IGBT Suitable for UPS EV Chargers and Solar Inverters
Key Attributes
Model Number:
RGWS00TS65GC13-HXY
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
110ns
Td(on):
17ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
1.916nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@250uA
Gate Charge(Qg):
71nC@15V
Reverse Recovery Time(trr):
56ns
Switching Energy(Eoff):
510uJ
Turn-On Energy (Eon):
1.35mJ
Mfr. Part #:
RGWS00TS65GC13-HXY
Package:
TO-247
Product Description
Product Overview
The RGWS00TS65GC13 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring high reliability and performance. It features easy paralleling capability due to a positive temperature coefficient in V CESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.
Product Attributes
- Brand: HUAXUANYANG
- Model: RGWS00TS65GC13
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: TO-247
- Packing: 30PCS
Technical Specifications
| Parameter | Conditions | Value | Units |
| Absolute Maximum Ratings | |||
| Collector emitter voltage (VCE) | @ TVJ = 25C | 650 | V |
| DC collector current (IC) | TC = 25C | 80 | A |
| DC collector current (IC) | TC = 100C | 50 | A |
| Pulsed collector current (ICM) | TC = 25C | 200 | A |
| Maximum Diode forward current (IF) | TC = 25C | 80 | A |
| Maximum Diode forward current (IF) | TC = 100C | 50 | A |
| Diode pulsed current (IFM) | TC = 25C | 200 | A |
| Gate-Emitter voltage (VGE) | TVJ = 25C | 20 | V |
| Transient Gate-Emitter Voltage | TVJ = 25C (tp 10s, D < 0.010) | 30 | V |
| Power Dissipation (Ptot) | TC = 25C | 250 | W |
| Power Dissipation (Ptot) | TC = 100C | 129 | W |
| Operating Junction Temperature Range (TVJ) | -40 to +175 | C | |
| Storage Temperature Range (TSTG) | -55 to +150 | C | |
| Electrical Characteristics | |||
| Collector - Emitter Breakdown Voltage (V(BR)CES) | VGE = 0V , IC = 0.5mA | 650 | V |
| Collector - Emitter Saturation Voltage (VCESAT) | VGE = 15V , IC = 50A, TVJ = 25C | 1.6 | V |
| Collector - Emitter Saturation Voltage (VCESAT) | VGE = 15V , IC = 50A, TVJ = 125C | 1.93 | V |
| Collector - Emitter Saturation Voltage (VCESAT) | VGE = 15V , IC = 50A, TVJ = 175C | 2.0 | V |
| Diode forward voltage (VF) | TVJ = 25C, IF=40A | 1.85 | V |
| Diode forward voltage (VF) | VGE = 0V , IC = 50A, TVJ = 125C | 1.6 | V |
| Diode forward voltage (VF) | VGE = 0V , IC = 50A, TVJ = 175C | 1.45 | V |
| Gate-Emitter threshold voltage (VGE(th)) | VGE = VCE, IC = 250mA | 3.2 - 4.8 | V |
| Zero Gate voltage Collector current (ICES) | VCE = 650V , VGE = 0V | - | 50 mA |
| Gate-Emitter leakage current (IGES) | VGE = 20V , VCE = 0V | - | 100 nA |
| Transconductance (gfs) | VGE = 20V, IC = 50A | 56 | S |
| Dynamic Characteristics | |||
| Input Capacitance (Cies) | VGE = 0V, VCE = 25V, f = 1MHz | 1916 | pF |
| Output Capacitance (Coes) | 139 | pF | |
| Reverse Transfer Capacitance (Cres) | 13 | pF | |
| Gate Charge (Qg) | VGE = 0 to 15V, VCE = 520V, IC = 50A | 71 | nC |
| Gate to Emitter charge (Qge) | 10 | nC | |
| Gate to Collector charge (Qgc) | 21 | nC | |
| Switching Characteristics | |||
| Turn-On Delay Time (td(on)) | VGE = 15V, VCC = 400V, IC= 50A, RG(off) = 12,RG(on) = 12 | 17 | ns |
| Turn-On Rise Time (tr) | 30 | ns | |
| Turn-Off Delay Time (td(off)) | 110 | ns | |
| Turn-Off Fall Time (tf) | 34 | ns | |
| Turn-on energy (Eon) | 1.35 | mJ | |
| Turn-off energy (Eoff) | 0.51 | mJ | |
| Total switching energy (Ets) | 1.86 | mJ | |
| Diode Recovery Characteristics | |||
| Reverse recovery time (Trr) | VR = 400 V, IF = 50 A, di/dt = 400 A/S | 56 | ns |
| Reverse recovery charge (Qrr) | 0.27 | mC | |
| Peak reverse recovery current (Irrm) | 8 | A | |
| Thermal Resistance | |||
| Junction - ambient (RJA) | 40 | C/W | |
| Junction - case (RJC) IGBT | 0.65 | C/W | |
| Junction - case (RJC) Diode | 0.58 | C/W | |
2509181739_HXY-MOSFET-RGWS00TS65GC13-HXY_C49003463.pdf
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