insulated gate bipolar transistor HXY MOSFET RGS00TS65DHRC11-HXY with trench and field stop technology
Key Attributes
Model Number:
RGS00TS65DHRC11-HXY
Product Custom Attributes
Td(off):
122ns
Pd - Power Dissipation:
300W
Td(on):
24ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
92pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@1mA
Gate Charge(Qg):
179nC@15V
Reverse Recovery Time(trr):
98ns
Switching Energy(Eoff):
1.14mJ
Turn-On Energy (Eon):
1.38mJ
Input Capacitance(Cies):
3.363nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
206pF
Mfr. Part #:
RGS00TS65DHRC11-HXY
Package:
TO-247
Product Description
RGS00TS65DHRC11 Insulated Gate Bipolar Transistor
The RGS00TS65DHRC11 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high efficiency and reliability.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: RGS00TS65DHRC11
- Technology: Trench and Field Stop (T-FS)
- Certifications: Halogen Free, Green Devices Available, RoHS Compliant
- Package Type: TO-247
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Applications
- UPS
- Motor drives
- Boost converters
- Portable power stations
Technical Specifications
| Parameter | Value | Unit | Conditions |
|---|---|---|---|
| General Characteristics | |||
| Collector-Emitter Voltage (VCES) | 650 | V | |
| Collector Current (IC) | 50 | A | @TC=100C |
| Collector Current (IC) | 100 | A | @TC=25C |
| Collector-Emitter Saturation Voltage (VCE(sat).typ) | 1.65 | V | Typ. @ IC=50A, VGE=15V |
| Power Dissipation (PD) | 300 | W | @TC=25C |
| Operating Junction and Storage Temperature Range (TJmax, Tstg) | -55 to 175 | ||
| Absolute Maximum Ratings | |||
| Pulsed Collector Current (ICM) | 200 | A | tp limited by TJmax |
| Gate-Emitter Voltage (VGES) | 30 | V | |
| Short circuit withstand time (tSC) | 4 | s | VGE=15V, VCC400V, TJ175C |
| Thermal Characteristics | |||
| Junction-to-Case Thermal Resistance (RJC) (IGBT) | 0.50 | /W | |
| Junction-to-Case Thermal Resistance (RJC) (Diode) | 0.65 | /W | |
| Junction-to-Ambient Thermal Resistance (RJA) | 40 | /W | |
| Electrical Characteristics | |||
| Collector-Emitter Breakdown Voltage (VCES) | 650 | V | VGE =0V, IC=1mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.65 - 2.00 | V | VGE =15V, IC =50A, TJ=25 - 175 |
| Gate Threshold Voltage (VGE(TH)) | 4.5 - 6.5 | V | VCE=VGE,IC=1mA |
| Diode Forward Voltage (VF) | 1.23 - 1.85 | V | IF=50A, TJ=25 - 175 |
| Collector-Emitter Leakage Current (ICES) | -- | A | VCE=650V, VGE=0V, Max. 10 A |
| Gate-Emitter Forward Leakage Current (IGES(F)) | -- | nA | VGE=+20V, Max. 100 nA |
| Gate-Emitter Reverse Leakage Current (IGES(R)) | -- | nA | VGE=-20V, Max. -100 nA |
| Dynamic Characteristics | |||
| Input Capacitance (Cies) | -- | pF | VGE=0V, VCE=25V, f=1.0MHz, Typ. 3363 pF |
| Output Capacitance (Coes) | -- | pF | Typ. 206 pF |
| Reverse Transfer Capacitance (Cres) | -- | pF | Typ. 92 pF |
| Gate Charge (Qg) | -- | nC | VCC=520V, ICE=50A, VGE=15V, Typ. 179 nC |
| Gate-emitter Charge (Qge) | -- | nC | Typ. 31 nC |
| Gate-collector Charge (Qgc) | -- | nC | Typ. 87 nC |
| Short circuit collector current (IC(SC)) | 469 | A | VGE=15V, VCC400V, tSC4s, TJ175 |
| IGBT Switching Characteristics (TJ=25) | |||
| Turn-on Delay Time (td(on)) | -- | ns | IC=50A, VCC=400V, VGE=15V, Rg=5, Typ. 24 ns |
| Rise Time (tr) | -- | ns | Typ. 86 ns |
| Turn-Off Delay Time (td(off)) | -- | ns | Typ. 122 ns |
| Fall Time (tf) | -- | ns | Typ. 74 ns |
| Turn-On Switching Loss (Eon) | -- | mJ | Typ. 1.38 mJ |
| Turn-Off Switching Loss (Eoff) | -- | mJ | Typ. 1.14 mJ |
| Total Switching Loss (Ets) | -- | mJ | Typ. 2.52 mJ |
| IGBT Switching Characteristics (TJ=175) | |||
| Turn-on Delay Time (td(on)) | -- | ns | IC=50A, VCC=400V, VGE=15V, Rg=5, Typ. 33 ns |
| Rise Time (tr) | -- | ns | Typ. 97 ns |
| Turn-Off Delay Time (td(off)) | -- | ns | Typ. 146 ns |
| Fall Time (tf) | -- | ns | Typ. 84 ns |
| Turn-On Switching Loss (Eon) | -- | mJ | Typ. 1.65 mJ |
| Turn-Off Switching Loss (Eoff) | -- | mJ | Typ. 1.32 mJ |
| Total Switching Loss (Ets) | -- | mJ | Typ. 2.97 mJ |
| Diode Characteristics (TJ=25) | |||
| Reverse Recovery Time (Trr) | -- | ns | IF=50A, VCC=400V, di/dt=200A/s, Typ. 98 ns |
| Reverse Recovery Charge (Qrr) | -- | C | Typ. 1580 C |
| Reverse Recovery Current (Irrm) | -- | A | Typ. 26 A |
| Diode Characteristics (TJ=175) | |||
| Reverse Recovery Time (Trr) | -- | ns | IF=50A, VCC=400V, di/dt=200A/s, Typ. 104 ns |
| Reverse Recovery Charge (Qrr) | -- | C | Typ. 1640 C |
| Reverse Recovery Current (Irrm) | -- | A | Typ. 27 A |
2509181737_HXY-MOSFET-RGS00TS65DHRC11-HXY_C49003385.pdf
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