switching transistor HXY MOSFET RGS00TS65EHRC11-HXY for UPS motor drives boost converter applications
Key Attributes
Model Number:
RGS00TS65EHRC11-HXY
Product Custom Attributes
Td(off):
122ns
Pd - Power Dissipation:
300W
Td(on):
24ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
92pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@1mA
Operating Temperature:
-55℃~+175℃
Gate Charge(Qg):
179nC@15V
Reverse Recovery Time(trr):
98ns
Switching Energy(Eoff):
1.14mJ
Turn-On Energy (Eon):
1.38mJ
Input Capacitance(Cies):
3.363nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
206pF
Mfr. Part #:
RGS00TS65EHRC11-HXY
Package:
TO-247
Product Description
Product Overview
The RGS00TS65EHRC11 is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for applications such as UPS, motor drives, and boost converters, offering features like a positive temperature coefficient, fast switching, low VCE(sat), and a reliable, rugged construction. Available in Halogen Free and Green Devices (RoHS Compliant).
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: RGS00TS65EHRC11
- Package Type: TO-247
- Certifications: RoHS Compliant, Halogen Free and Green Devices Available
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 650 | V | Collector-Emitter Voltage |
| IC | 50 | A | Collector Current @TC=100C |
| ICM | 200 | A | Pulsed Collector Current |
| VCE(sat).typ | 1.65 | V | Collector-Emitter Saturation Voltage (Typ.) |
| PD | 300 | W | Power Dissipation @TC=25C |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.50 | /W | Junction-to-Case (IGBT) |
| RJA | 40 | /W | Junction-to-Ambient |
| VGE(TH) | 4.5 - 6.5 | V | Gate Threshold Voltage (Min-Max) |
| ICES | 10 | A | Collector-Emitter Leakage Current @VCE=650V, VGE=0V |
| Cies | 3363 | pF | Input Capacitance |
| Qg | 179 | nC | Gate Charge |
| td(on) | 24 | ns | Turn-on Delay Time @TJ=25 |
| tr | 86 | ns | Rise Time @TJ=25 |
| td(off) | 122 | ns | Turn-Off Delay Time @TJ=25 |
| tf | 74 | ns | Fall Time @TJ=25 |
| Eon | 1.38 | mJ | Turn-On Switching Loss @TJ=25 |
| Eoff | 1.14 | mJ | Turn-Off Switching Loss @TJ=25 |
| Trr | 98 | ns | Reverse Recovery Time @TJ=25 |
| Qrr | 1580 | C | Reverse Recovery Charge @TJ=25 |
| Irrm | 26 | A | Reverse Recovery Current @TJ=25 |
2509181737_HXY-MOSFET-RGS00TS65EHRC11-HXY_C49003386.pdf
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