Durable HXY MOSFET NGTB40N120FL3WG-HXY IGBT module with 441 watt power dissipation and TO247 package type
Key Attributes
Model Number:
NGTB40N120FL3WG-HXY
Product Custom Attributes
Pd - Power Dissipation:
441W
Td(off):
262ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
93pF
Input Capacitance(Cies):
3.98nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
346nC@15V
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
157pF
Reverse Recovery Time(trr):
94ns
Switching Energy(Eoff):
2.3mJ
Turn-On Energy (Eon):
1.3mJ
Mfr. Part #:
NGTB40N120FL3WG-HXY
Package:
TO-247
Product Description
Product Overview
The NGTB40N120FL3WG is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is AEC-Q101 Qualified and suitable for demanding applications.
Product Attributes
- Brand: HUAXUANYANG
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Certifications: AEC-Q101 Qualified, Halogen Free and Green Devices Available (RoHS Compliant)
- Package Type: TO-247
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC @TC=25C | 80 | A | Collector Current |
| IC @TC=100C | 40 | A | Collector Current |
| VCE(sat).typ | 1.70 | V | Collector-Emitter Saturation Voltage (Typical) |
| PD @TC=25C | 441 | W | Power Dissipation |
| TJmax, Tstg | 55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.80 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage |
| ICES | 10 | A | Collector-Emitter Leakage Current @ VCE=1200V, VGE=0V |
| Cies | 3980 | pF | Input Capacitance |
| Coes | 157 | pF | Output Capacitance |
| Cres | 93 | pF | Reverse Transfer Capacitance |
| Qg | 346 | nC | Gate Charge |
| td(on) @TJ=25 | 25 | ns | Turn-on Delay Time |
| tr @TJ=25 | 28 | ns | Rise Time |
| td(off) @TJ=25 | 262 | ns | Turn-Off Delay Time |
| tf @TJ=25 | 149 | ns | Fall Time |
| Eon @TJ=25 | 1.30 | mJ | Turn-On Switching Loss |
| Eoff @TJ=25 | 2.30 | mJ | Turn-Off Switching Loss |
| Ets @TJ=25 | 3.60 | mJ | Total Switching Loss |
| Trr @TJ=25 | 94 | ns | Reverse Recovery Time |
| Qrr @TJ=25 | 225 | nC | Reverse Recovery Charge |
| Irrm @TJ=25 | 9.7 | A | Reverse Recovery Current |
| Device Per Unit | Tube | 30 | Quantity |
2509181737_HXY-MOSFET-NGTB40N120FL3WG-HXY_C49003312.pdf
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