High surge current HXY MOSFET BT137S-800E-HXY triac for motor control and static switching solutions
Product Overview
Glass passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating, and static switching.
Product Attributes
- Brand: HUAXUANYANG HXY
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Material: Plastic-Encapsulate
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
| repetitive peak off-state voltage | VDRM /VRRM | Tj =125 C | 800 | V |
| RMS on-state current | IT(RMS) | T =125 j C | 50 | A |
| Non repetitive surge peak on-state current | ITSM | t =20ms Tj =25C | 2500 | A |
| Storage Temperature | Tstg | -40 ~ 150 | C | |
| Junction Temperature | Tj | -40 ~ 125 | C | |
| Gate non-trigger voltage | VGD | VD= 1/2V DRM | 0.2 | V |
| On-state voltage | VTM | IT= 6A,tp=380us | 5 (typ) | V |
| Gate trigger current | IGT | VD=12V RL=100 | 0.8 (typ) | mA |
| Gate trigger voltage | VGT | VD=12V RL=100 | 2.5 (typ) | V |
| Holding current | IH | VD=12V ,IGT=100mA | 50 | mA |
| Repetitive Peak Off-State Current | IDRM,IRRM | VDRM=VRRM T =25 j C | 0.8 (typ) | mA |
| Repetitive Peak Off-State Current | IDRM,IRRM | VDRM=VRRM T =125 j C | 0.8 (typ) | mA |
| Critical-rate of rise of commutation current | (dI/dt)c | IG=2IGT tr100ns F=120Hz | 50 | A/us |
| Rate of change of commutating voltage | dV/dt | T =125 j C DRM(MAX) | 20 | V/us |
| Turn-on time | t gt | ITM =16A ,VDM=V DRM | 1.65 (typ) | us |
2508121550_HXY-MOSFET-BT137S-800E-HXY_C50275360.pdf
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