Jilin Sino Microelectronics 3DD4612DT 92 high voltage transistor for fast switching power electronics
Key Attributes
Model Number:
3DD4612DT-92
Product Custom Attributes
Emitter-Base Voltage(Vebo):
14V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
1W
Transition Frequency(fT):
4MHz
Type:
NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
450V
Operating Temperature:
-
Mfr. Part #:
3DD4612DT-92
Package:
TO-92-3
Product Description
Product Overview
The 3DD4612DT/M is a high voltage, fast-switching NPN power transistor designed for various electronic applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for chargers, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Origin: China
- Certifications: RoHS (Halogen Free option available)
Technical Specifications
| Order Code | Marking | Halogen Free | Package | Packaging | IC (A) | VCEO (V) | PC (TO-92) (W) | PC (TO-126) (W) |
| 3DD4612DT-O-T-B-A | 4612DT | NO | TO-92 | Brede | 1.5 | 450 | 1 | - |
| 3DD4612DT-O-T-N-C | 4612DT | NO | TO-92 | Bag | 1.5 | 450 | 1 | - |
| 3DD4612DT-R-T-B-A | 4612DT | YES | TO-92 | Brede | 1.5 | 450 | 1 | - |
| 3DD4612DT-R-T-N-C | 4612DT | YES | TO-92 | Bag | 1.5 | 450 | 1 | - |
| 3DD4612DM-O-M-N-C | 4612DM | NO | TO-126 | Bag | 1.5 | 450 | - | 20 |
| 3DD4612DM-R-M-N-C | 4612DM | YES | TO-126 | Bag | 1.5 | 450 | - | 20 |
| Parameter | Symbol | Value | Unit | Test Conditions | Min | Typ | Max |
| Collector-Emitter Voltage (VBE=0) | VCES | 700 | V | - | - | - | - |
| Collector-Emitter Voltage (IB=0) | VCEO | 450 | V | - | - | - | - |
| Emitter-Base Voltage | VEBO | 9 | V | - | - | - | - |
| Collector Current (DC) | IC | 1.5 | A | - | - | - | - |
| Collector Current (pulse) | ICP | 3.0 | A | - | - | - | - |
| Junction Temperature | Tj | 150 | - | - | - | - | |
| Storage Temperature | Tstg | -55~+150 | - | - | - | - | |
| Breakdown Voltage, Collector-Emitter | V(BR)CEO | 450 | V | IC=10mA,IB=0 | 450 | 500 | - |
| Breakdown Voltage, Collector-Base | V(BR)CBO | 700 | V | IC=1mA,IE=0 | 700 | 800 | - |
| Breakdown Voltage, Emitter-Base | V(BR)EBO | 9 | V | IE=1mA,IC=0 | 9 | 14 | - |
| Collector Cut-off Current | ICBO | 1 | A | VCB=700V, IE=0 | - | - | 1 |
| Collector Cut-off Current | ICEO | 1 | mA | VCE=450V,IB=0 | - | - | 1 |
| Emitter Cut-off Current | IEBO | 0.5 | A | VEB=7V, IC=0 | - | - | 0.5 |
| DC Current Gain | hFE | 10-40 | - | VCE =10V, IC=100mA | 10 | 22 | 40 |
| DC Current Gain | hFE | 3.0-5.0 | - | VCE=5V, IC=1.5A | 3.0 | 5.0 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.3-0.8 | V | IC=0.5A, IB=0.1A | 0.3 | - | 0.8 |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.0-1.2 | V | IC=0.5A, IB=0.1A | - | 1.0 | 1.2 |
| Fall Time | tf | 0.7 | S | VCC=24V IC=0.25A,IB1=-IB2=0.05A | - | - | 0.7 |
| Storage Time | ts | 1.5-4.0 | S | IC=0.25A | 1.5 | - | 4.0 |
| Transition Frequency | fT | 4 | MHz | VCE=10V, IC=0.1A | 4 | - | - |
| Thermal Resistance Junction Ambient | Rth(j-a) | 125 | /W | TO-92 | - | - | 125 |
| Thermal Resistance Junction Case | Rth(j-c) | 6.25 | /W | TO-126 | - | - | 6.25 |
2410121221_Jilin-Sino-Microelectronics-3DD4612DT-92_C272491.pdf
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