switching device HXY MOSFET MIW40N120FLA-BP-HXY offering low VCE saturation and avalanche energy capability
Key Attributes
Model Number:
MIW40N120FLA-BP-HXY
Product Custom Attributes
Pd - Power Dissipation:
441W
Td(off):
262ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
346nC@15V
Reverse Recovery Time(trr):
94ns
Switching Energy(Eoff):
2.3mJ
Turn-On Energy (Eon):
1.3mJ
Input Capacitance(Cies):
3.98nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
157pF
Mfr. Part #:
MIW40N120FLA-BP-HXY
Package:
TO-247
Product Description
Product Overview
The MIW40N120FLA-BP is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficiency, featuring a positive temperature coefficient, fast switching speeds, low VCE(sat), and a rugged construction. The device is AEC-Q101 qualified and operates at temperatures up to 175, with halogen-free and green options available.
Product Attributes
- Brand: HUAXUANYANG
- Manufacturer: HXY ELECTRONICS CO.,LTD
- Model: MIW40N120FLA-BP
- Technology: Trench and Field Stop (T-FS)
- Certifications: AEC-Q101 Qualified, RoHS Compliant
- Package Type: TO-247
- Quantity per Unit: 30 (Tube)
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC | 40 | A | Collector Current @TC=100C |
| ICM | 160 | A | Pulsed Collector Current, tp limited by TJmax |
| VCE(sat).typ | 1.70 | V | Collector-Emitter Saturation Voltage (Typ. @ IC=40A, TJ=25) |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage (Typ. 5.3V @ IC=1mA) |
| PD | 441 | W | Power Dissipation @TC=25C |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case Thermal Resistance (IGBT) |
| RJC (Diode) | 0.80 | /W | Junction-to-Case Thermal Resistance (Diode) |
| RJA | 40 | /W | Junction-to-Ambient Thermal Resistance |
| Cies | 3980 | pF | Input Capacitance (Typ. @ VCE=25V, f=1.0MHz) |
| Coes | 157 | pF | Output Capacitance (Typ.) |
| Cres | 93 | pF | Reverse Transfer Capacitance (Typ.) |
| Qg | 346 | nC | Gate Charge (Typ. @ VCC=960V, ICE=40A, VGE=15V) |
| td(on) | 25 - 26 | ns | Turn-on Delay Time (Typ. @ TJ=25 / 175) |
| tr | 28 - 35 | ns | Rise Time (Typ. @ TJ=25 / 175) |
| td(off) | 262 - 331 | ns | Turn-Off Delay Time (Typ. @ TJ=25 / 175) |
| tf | 149 - 224 | ns | Fall Time (Typ. @ TJ=25 / 175) |
| Eon | 1.30 - 2.20 | mJ | Turn-On Switching Loss (Typ. @ TJ=25 / 175) |
| Eoff | 2.30 - 3.70 | mJ | Turn-Off Switching Loss (Typ. @ TJ=25 / 175) |
| Ets | 3.60 - 5.90 | mJ | Total Switching Loss (Typ. @ TJ=25 / 175) |
| Trr | 94 - 125 | ns | Reverse Recovery Time (Typ. @ TJ=25 / 175) |
| Qrr | 225 - 277 | nC | Reverse Recovery Charge (Typ. @ TJ=25 / 175) |
| Irrm | 9.7 - 11.2 | A | Reverse Recovery Current (Typ. @ TJ=25 / 175) |
Applications
- PTC
- Motor drives
- OBC (On-Board Charger)
2509181738_HXY-MOSFET-MIW40N120FLA-BP-HXY_C49003428.pdf
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