power transistor Jilin Sino Microelectronics 3DD13007MD 220C with RoHS compliance and TO 220C package
Key Attributes
Model Number:
3DD13007MD-220C
Product Custom Attributes
Current - Collector Cutoff:
100uA
Pd - Power Dissipation:
80W
Transition Frequency(fT):
4MHz
Type:
NPN
Current - Collector(Ic):
8A
Collector - Emitter Voltage VCEO:
400V
Mfr. Part #:
3DD13007MD-220C
Package:
TO-220
Product Description
Product Overview
The 3DD13007K is a high voltage, fast-switching NPN power transistor designed for demanding applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lamps, electronic ballasts, high-frequency switching power supplies, high-frequency power transformation, and general power amplification circuits. This product is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Model: 3DD13007K
- Marking: D13007K
- Halogen Free: NO
- Package: TO-220C
- Packaging: Tube
- Certifications: RoHS product
Technical Specifications
| Parameter | Symbol | Value (min) | Value (typ) | Value (max) | Unit | Tests conditions |
| Collector-Emitter Voltage (VBE=0) | VCES | 700 | - | - | V | - |
| Collector-Emitter Voltage (IB=0) | VCEO | 400 | - | - | V | - |
| Emitter-Base Voltage | VEBO | - | - | 9 | V | - |
| Collector Current (DC) | IC | - | - | 8 | A | - |
| Collector Current (pulse) | ICP | - | - | 16 | A | Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%. |
| Base Current (DC) | IB | - | - | 4 | A | - |
| Base Current (pulse) | IBP | - | - | 8 | A | - |
| Total Dissipation (TO-220C) | PC | - | - | 80 | W | - |
| Junction Temperature | Tj | - | - | 150 | - | |
| Storage Temperature | Tstg | -55 | - | 150 | - | |
| Thermal Resistance Junction Case TO-220C | Rth(j-c) | - | - | 1.56 | /W | - |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 400 | - | - | V | IC=10mA,IB=0 |
| Collector-Base Breakdown Voltage | V(BR)CBO | 700 | - | - | V | IC=1mA,IB=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 9 | - | - | V | IE=1mA,IC=0 |
| Collector Cut-off Current | ICBO | - | - | 100 | A | VCB=700V, IE=0 |
| Collector Cut-off Current | ICEO | - | - | 50 | A | VCE=400V,IB=0 |
| Emitter Cut-off Current | IEBO | - | - | 10 | A | VEB=9V, IC=0 |
| DC Current Gain | Hfe(1) | 8 | - | 50 | - | VCE =5V, IC=1A |
| DC Current Gain | Hfe(2) | 5 | - | - | - | VCE =5V, IC=5A |
| Collector-Emitter Saturation Voltage | VCE(sat)(1) | - | - | 1.2 | V | IC=5A, IB=1A |
| Collector-Emitter Saturation Voltage | VCE(sat)(2) | - | - | 3.0 | V | IC=8A, IB=2A |
| Base-Emitter Saturation Voltage | VBE(sat) | - | - | 1.8 | V | IC=5A, IB=1A |
| Fall Time | tf | - | - | 0.7 | S | - |
| Storage Time | ts | - | - | 4 | S | VCC=24V IC=5A,IB1=-IB2=1A |
| Transition Frequency | fT | 4 | - | - | MHz | VCE=10V, IC=0.5A |
2411201842_Jilin-Sino-Microelectronics-3DD13007MD-220C_C272480.pdf
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