Industrial Motor Control Triac HXY MOSFET BT134W-600E for Static Switching and Heating Applications
Key Attributes
Model Number:
BT134W-600E
Product Custom Attributes
Holding Current (Ih):
30mA
Current - Gate Trigger(Igt):
10mA
Voltage - On State(Vtm):
1.65V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
2A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
20A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
2V
Mfr. Part #:
BT134W-600E
Package:
SOT-223
Product Description
Product Overview
The BT134W-600E is a glass-passivated triac in a plastic-encapsulated package, designed for applications requiring high bidirectional transient and blocking voltage capability and excellent thermal cycling performance. It is suitable for motor control, industrial and domestic lighting, heating, and static switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen, China
- Package: SOT-223
- Features: Glass passivated, high bidirectional transient and blocking voltage capability, high thermal cycling performance.
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit | |
| Maximum Ratings | |||||||
| VDRM /VRRM | repetitive peak off-state voltage | 600 | V | ||||
| IGM | Peak Gate Current | - | A | ||||
| VGM | Peak gate voltage | - | V | ||||
| PGM | Peak gate power | 0.5 | W | ||||
| Tj G(AV) | Junction Temperature | -40 | 125 | C | |||
| IT(RMS) | RMS on-state current | - | A | ||||
| ITSM | Non repetitive surge peak on-state current | t = 2ms T j =25 C | 20 | A | |||
| I t | Non repetitive surge peak on-state current | t =16.7ms T j =25 C | 16 | A | |||
| I t | I t for fusing | t = 10 ms | 2 | A s | |||
| dl/dt | Critical-rate of rise of commutation current | IG=2IGT tr100ns F=120Hz | 50 | A/us | |||
| dV/dt | Critical-rate of rise of commutating voltage | Tj =125C | 20 | V/us | |||
| Tstg | Storage Temperature | -40 | 150 | C | |||
| Electrical Characteristics (Ta=25C unless otherwise specified) | |||||||
| IDRM,IRRM | Repetitive Peak Off-State Current / Repetitive Peak Reverse Current | VDRM=VRRM T j =125C | 1 | mA | |||
| VGD | Gate non-trigger voltage | VD= 1/2V DRM | 5 | V | |||
| VTM | On-state voltage | IT=2A,tp=380us | 1.65 | V | |||
| I GT | Gate trigger current | T2(+), G(+) | 0.8 | mA | |||
| T2(+), G(-) | 0.8 | mA | |||||
| T2(-), G(-) | 0.8 | mA | |||||
| T2(-), G(+) | VD=12V RL=100 | 0.8 | mA | ||||
| V GT | Gate trigger voltage | T2(+), G(+) | VD=12V RL=100 | 2 | V | ||
| T2(+), G(-) | 2 | V | |||||
| T2(-), G(-) | 2 | V | |||||
| T2(-), G(+) | 2.5 | V | |||||
| IH | Holding current | VD=12V,IGT=100mA | 30 | mA | |||
| t gt | Turn-on time | ITM =16A ,VDM=VDRM VDM=67%VDRM T j =125C | 2 | us | |||
| (dl/dt)c | Critical-rate of rise of commutation voltage | VDM=400V T j =125C IG =0.1A,dlG/dt=5A/uS | 5.4 | A/ms | |||
2508121550_HXY-MOSFET-BT134W-600E_C50275355.pdf
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