Power electronics component HXY MOSFET IRG8P50N120KD-EPBF-HXY IGBT designed for motor drives and PTC
Key Attributes
Model Number:
IRG8P50N120KD-EPBF-HXY
Product Custom Attributes
Pd - Power Dissipation:
441W
Td(off):
262ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
346nC@15V
Reverse Recovery Time(trr):
94ns
Switching Energy(Eoff):
2.3mJ
Turn-On Energy (Eon):
1.3mJ
Input Capacitance(Cies):
3.98nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
157pF
Mfr. Part #:
IRG8P50N120KD-EPBF-HXY
Package:
TO-247
Product Description
Product Overview
The IRG8P50N120KD-EPBF is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as PTC, motor drives, and On-Board Chargers (OBC).
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: IRG8P50N120KD-EPBF
- Package Type: TO-247
- Certifications: AEC-Q101 Qualified, Halogen Free and Green Devices Available (RoHS Compliant)
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Parameter | Value | Unit | Conditions | Min. | Typ. | Max. |
| Absolute Ratings | ||||||
| VCES | 1200 | V | ||||
| IC @TC=25C | 80 | A | ||||
| IC @TC=100C | 40 | A | ||||
| ICM (Pulsed) | 160 | A | tp limited by TJmax | |||
| IF @TC=25C | 80 | A | ||||
| IF @TC=100C | 40 | A | ||||
| IFM (Maximum) | 160 | A | limited by TJmax | |||
| VGES | 30 | V | ||||
| tSC (Short circuit withstand time) | 13 | s | VGE=15V, VCC400V, allowed number of short circuits<1000,times between short circuits1.0s,TJ175C | |||
| PD @TC=25C | 441 | W | ||||
| TJmax, Tstg | 55 to 175 | Operating Junction and Storage Temperature Range | ||||
| TL (Maximum for Soldering) | 260 | |||||
| Thermal Characteristics | ||||||
| RJC (IGBT) | 0.34 | /W | Junction-to-Case | |||
| RJC (Diode) | 0.80 | /W | Junction-to-Case | |||
| RJA | 40 | /W | Junction-to-Ambient | |||
| Electrical Characteristics (Static) | ||||||
| VCES (Breakdown Voltage) | 1200 | V | VGE =0V, IC=1mA | |||
| VCE(sat) | V | VGE =15V, IC =40A | 1.70 (TJ=25) | 2.20 (TJ=175) | ||
| VGE(TH) (Gate Threshold Voltage) | V | VCE=VGE,IC=1mA | 4.3 | 5.3 | 6.3 | |
| VF (Diode Forward Voltage) | V | IF=40A | 1.85 (TJ=25) | 2.25 (TJ=175) | ||
| ICES (Collector-Emitter Leakage Current) | A | VCE=1200V, VGE=0V | 10 | |||
| IGES(F) (Gate-Emitter Forward Leakage Current) | nA | VGE=+20V | 200 | |||
| IGES(R) (Gate-Emitter Reverse Leakage Current) | nA | VGE=-20V | -200 | |||
| Electrical Characteristics (Dynamic) | ||||||
| Cies (Input Capacitance) | pF | VGE=0V, VCE=25V, f=1.0MHz | 3980 | |||
| Coes (Output Capacitance) | pF | 157 | ||||
| Cres (Reverse Transfer Capacitance) | pF | 93 | ||||
| Qg (Gate charge) | nC | VCC=960V, ICE=40A, VGE=15V | 346 | |||
| Qge (Gate-emitter charge) | nC | 2.4 | ||||
| Qgc (Gate-collector charge) | nC | 238 | ||||
| IGBT Switching Characteristics (TJ=25) | ||||||
| td(on) (Turn-on Delay Time) | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load | 25 | |||
| tr (Rise Time) | ns | 28 | ||||
| td(off) (Turn-Off Delay Time) | ns | 262 | ||||
| tf (Fall Time) | ns | 149 | ||||
| Eon (Turn-On Switching Loss) | mJ | 1.30 | ||||
| Eoff (Turn-Off Switching Loss) | mJ | 2.30 | ||||
| Ets (Total Switching Loss) | mJ | 3.60 | ||||
| IGBT Switching Characteristics (TJ=175) | ||||||
| td(on) (Turn-on Delay Time) | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load | 26 | |||
| tr (Rise Time) | ns | 35 | ||||
| td(off) (Turn-Off Delay Time) | ns | 331 | ||||
| tf (Fall Time) | ns | 224 | ||||
| Eon (Turn-On Switching Loss) | mJ | 2.20 | ||||
| Eoff (Turn-Off Switching Loss) | mJ | 3.70 | ||||
| Ets (Total Switching Loss) | mJ | 5.90 | ||||
| Diode Characteristics (TJ=25) | ||||||
| Trr (Reverse Recovery Time) | ns | IF=40A, VCC=600V, di/dt=200A/s | 94 | |||
| Qrr (Reverse Recovery Charge) | nC | 225 | ||||
| Irrm (Reverse Recovery Current) | A | 9.7 | ||||
| Diode Characteristics (TJ=175) | ||||||
| Trr (Reverse Recovery Time) | ns | IF=40A, VCC=600V, di/dt=200A/s | 125 | |||
| Qrr (Reverse Recovery Charge) | nC | 277 | ||||
| Irrm (Reverse Recovery Current) | A | 11.2 | ||||
2509181737_HXY-MOSFET-IRG8P50N120KD-EPBF-HXY_C49003396.pdf
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