Trench and Field Stop Technology Based IGBT HXY MOSFET FGH40T120SMD-F155-HXY for Energy Management
Key Attributes
Model Number:
FGH40T120SMD-F155-HXY
Product Custom Attributes
Pd - Power Dissipation:
441W
Td(off):
262ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Operating Temperature:
-55℃~+175℃
Gate Charge(Qg):
346nC@15V
Reverse Recovery Time(trr):
94ns
Turn-On Energy (Eon):
1.3mJ
Input Capacitance(Cies):
3.98nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
157pF
Mfr. Part #:
FGH40T120SMD-F155-HXY
Package:
TO-247
Product Description
Product Overview
The FGH40T120SMD-F155 is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficient power handling.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: FGH40T120SMD-F155
- Technology: Trench and Field Stop (T-FS)
- Package Type: TO-247
- Certifications: AEC-Q101 Qualified, RoHS Compliant, Halogen Free and Green Devices Available
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Parameter | Value | Unit | Conditions |
| General Characteristics | |||
| Collector-Emitter Voltage (VCES) | 1200 | V | |
| Collector Current (IC) @TC=25C | 80 | A | |
| Collector Current (IC) @TC=100C | 40 | A | |
| Pulsed Collector Current (ICM) | 160 | A | tp limited by TJmax |
| Gate-Emitter Voltage (VGES) | 30 | V | |
| Power Dissipation (PD) @TC=25C | 441 | W | |
| Operating Junction and Storage Temperature Range (TJmax, Tstg) | -55 to 175 | ||
| Maximum Temperature for Soldering (TL) | 260 | ||
| Electrical Characteristics | |||
| Collector-Emitter Breakdown Voltage (VCES) | 1200 | V | VGE=0V, IC=1mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.70 | V | VGE=15V, IC=40A, TJ=25 |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.07 | V | VGE=15V, IC=40A, TJ=125 |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.20 | V | VGE=15V, IC=40A, TJ=175 |
| Gate Threshold Voltage (VGE(TH)) | 4.3 - 6.3 | V | VCE=VGE, IC=1mA |
| Diode Forward Voltage (VF) | 1.85 | V | IF=40A, TJ=25 |
| Diode Forward Voltage (VF) | 1.70 | V | IF=40A, TJ=125 |
| Diode Forward Voltage (VF) | 1.61 | V | IF=40A, TJ=175 |
| Collector-Emitter Leakage Current (ICES) | 10 | A | VCE=1200V, VGE=0V |
| Gate-Emitter Forward Leakage Current (IGES(F)) | 200 | nA | VGE=+20V |
| Gate-Emitter Reverse Leakage Current (IGES(R)) | -200 | nA | VGE=-20V |
| Dynamic Characteristics | |||
| Input Capacitance (Cies) | 3980 | pF | VGE=0V, VCE=25V, f=1.0MHz |
| Output Capacitance (Coes) | 157 | pF | |
| Reverse Transfer Capacitance (Cres) | 93 | pF | |
| Gate charge (Qg) | 346 | nC | VCC=960V, ICE=40A, VGE=15V |
| IGBT Switching Characteristics (TJ=25) | |||
| Turn-on Delay Time (td(on)) | 25 | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| Rise Time (tr) | 28 | ns | |
| Turn-Off Delay Time (td(off)) | 262 | ns | |
| Fall Time (tf) | 149 | ns | |
| Turn-On Switching Loss (Eon) | 1.30 | mJ | |
| Turn-Off Switching Loss (Eoff) | 2.30 | mJ | |
| Total Switching Loss (Ets) | 3.60 | mJ | |
| IGBT Switching Characteristics (TJ=175) | |||
| Turn-on Delay Time (td(on)) | 26 | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| Rise Time (tr) | 35 | ns | |
| Turn-Off Delay Time (td(off)) | 331 | ns | |
| Fall Time (tf) | 224 | ns | |
| Turn-On Switching Loss (Eon) | 2.20 | mJ | |
| Turn-Off Switching Loss (Eoff) | 3.70 | mJ | |
| Total Switching Loss (Ets) | 5.90 | mJ | |
| Diode Characteristics (TJ=25) | |||
| Reverse Recovery Time (Trr) | 94 | ns | IF=40A, VCC=600V, di/dt=200A/s |
| Reverse Recovery Charge (Qrr) | 225 | nC | |
| Reverse Recovery Current (Irrm) | 9.7 | A | |
| Diode Characteristics (TJ=175) | |||
| Reverse Recovery Time (Trr) | 125 | ns | IF=40A, VCC=600V, di/dt=200A/s |
| Reverse Recovery Charge (Qrr) | 277 | nC | |
| Reverse Recovery Current (Irrm) | 11.2 | A | |
| Thermal Characteristics | |||
| Junction-to-Case (IGBT) (RJC) | 0.34 | /W | |
| Junction-to-Case (Diode) (RJC) | 0.80 | /W | |
| Junction-to-Ambient (RJA) | 40 | /W | |
| Package Information | |||
| Device | TO-247 | ||
| Quantity per Unit | 30 | Tube | |
2509181737_HXY-MOSFET-FGH40T120SMD-F155-HXY_C49003318.pdf
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