High speed switching diode IDCHIP BAW56 with small total capacitance and compact SOT 23 package design
Key Attributes
Model Number:
BAW56
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
4ns
Voltage - DC Reverse (Vr) (Max):
85V
Diode Configuration:
1 Pair Common Anode
Operating Junction Temperature Range:
-
Pd - Power Dissipation:
350mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
215mA
Mfr. Part #:
BAW56
Package:
SOT-23
Product Description
Product Overview
The BAW56 is a silicon epitaxial planar switching diode designed for ultra-high speed switching applications. It features a small package, low forward voltage, fast reverse recovery time, and small total capacitance, making it ideal for high-performance electronic circuits.
Product Attributes
- Brand: BAW56
- Origin: Shenzhen Yingruixin Electronics Technology Co., Ltd.
- Material: Silicon Epitaxial Planar
- Package Type: SOT-23 Plastic Package
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Peak Repetitive Reverse Voltage | VRRM | 85 | V | |
| Continuous Reverse Voltage | VR | 75 | V | |
| Forward Current (DC) - Single Diode Loaded | IF | 215 | mA | |
| Forward Current (DC) - Double Diode Loaded | IF | 125 | mA | |
| Repetitive Peak Forward Current | IFRM | 450 | mA | |
| Non-repetitive Peak Forward Surge Current (t = 1 s) | IFSM | 0.5 | A | |
| Non-repetitive Peak Forward Surge Current (t = 1 ms) | IFSM | 1 | A | |
| Non-repetitive Peak Forward Surge Current (t = 1 s) | IFSM | 4 | A | |
| Power Dissipation | Ptot | 350 | mW | |
| Operating Junction Temperature | Tj | 150 | OC | |
| Storage Temperature Range | Tstg | -65 to +150 | OC | |
| Forward Voltage (at IF = 1 mA) | VF | 0.715 | V | Max. |
| Forward Voltage (at IF = 10 mA) | VF | 0.855 | V | Max. |
| Forward Voltage (at IF = 50 mA) | VF | 1 | V | Max. |
| Forward Voltage (at IF = 150 mA) | VF | 1.25 | V | Max. |
| Reverse Current (at VR = 25 V) | IR | 30 | nA | Max. |
| Reverse Current (at VR = 75 V) | IR | 1 | A | Max. |
| Reverse Current (at VR = 25 V, TJ = 150 OC) | IR | 30 | A | Max. |
| Reverse Current (at VR = 75 V, TJ = 150 OC) | IR | 50 | A | Max. |
| Diode Capacitance (at VR = 0 , f = 1 MHz) | Cd | 2 | pF | Max. |
| Reverse Recovery Time (at IF = IR = 10 mA, RL = 100 ) | trr | 4 | ns | Max. |
2410121236_IDCHIP-BAW56_C2848192.pdf
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