Silicon NPN Transistor Array Infineon BC846PNH6327 with High Current Gain and Low Saturation Voltage
Key Attributes
Model Number:
BC846PNH6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
250MHz
Type:
NPN+PNP
Number:
1 NPN + 1 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-
Mfr. Part #:
BC846PNH6327
Package:
SC-70-6(SOT-363)
Product Description
Product Overview
The BC846PN/UPN_BC847PN series are NPN/PNP Silicon AF Transistor Arrays designed for AF input stage and driver applications. They offer high current gain, low collector-emitter saturation voltage, and feature two internally isolated NPN/PNP transistors in a single package. These devices are Pb-free (RoHS compliant) and qualified according to AEC Q101.
Product Attributes
- Brand: Infineon Technologies
- Material: Silicon
- Certifications: AEC Q101, RoHS compliant
Technical Specifications
| Type | Marking | Package | VCEO (V) | VCES (V) | VCBO (V) | VEBO (V) | IC (mA) | ICM (mA) | Ptot (mW) | Tj (C) | Tstg (C) | RthJS (K/W) | V(BR)CEO (V) | V(BR)CBO (V) | V(BR)CES (V) | V(BR)EBO (V) | ICBO (A) | hFE | VCEsat (mV) | VBEsat (mV) | VBE(ON) (V) | fT (MHz) | Ccb (pF) | Ceb (pF) | h11e (k) | h12e | h21e | h22e (S) |
| BC846PN | 1Os | SOT363 | 65 | 80 | 80 | 6 | 100 | 200 | 250 | 150 | -65 ... 150 | 140 | 65 | 80 | 80 | 6 | 0.015 | 200-450 | 90-650 | 700-900 | 0.58-0.82 | 250 | 1.5 | 8 | 4.5 | 2e-4 | 330 | 30 |
| BC846UPN | 1Os | SOT363 | 65 | 80 | 80 | 6 | 100 | 200 | 250 | 150 | -65 ... 150 | 130 | 65 | 80 | 80 | 6 | 0.015 | 200-450 | 90-650 | 700-900 | 0.58-0.82 | 250 | 1.5 | 8 | 4.5 | 2e-4 | 330 | 30 |
| BC847PN | 1Ps | SOT363 | 45 | 50 | 50 | 6 | 100 | 200 | 250 | 150 | -65 ... 150 | 140 | 45 | 50 | 50 | 6 | 5 | 250-290 | 200-300 | 700-900 | 0.66-0.75 | 250 | 1.5 | 8 | 4.5 | 2e-4 | 330 | 30 |
2410121733_Infineon-BC846PNH6327_C151485.pdf
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