Plastic encapsulated HXY MOSFET BT148W-600R-HXY thyristor engineered for high dvdt and EMI resistant applications
Key Attributes
Model Number:
BT148W-600R-HXY
Product Custom Attributes
Mfr. Part #:
BT148W-600R-HXY
Package:
SOT-223
Product Description
Product Overview
The BT148W-600R is a thyristor designed with a high dv/dt rate and strong resistance to electromagnetic interference. It is particularly recommended for applications such as residual current circuit breakers, straight hair curlers, and igniters.
Product Attributes
- Brand: HUAXUANYANG (HXY)
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Material: Plastic-Encapsulate
- Model: BT148W-600R
- Website: www.hxymos.com
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition | Min | Typ | Max |
| Absolute Maximum Ratings | Tstg | -40~150 | C | ||||
| Tj | 125 | C | |||||
| VDRM | 600 | V | (Tj=25C) | ||||
| VRRM | 600 | V | (Tj=25C) | ||||
| Electrical Characteristics | IGT | mA | VD=12V, RL=1k | 90 | |||
| VGT | V | VD=12V, RL=1k | 1 | ||||
| VGD | V | VD=1/2V DRM | 0.2 | ||||
| On-State Current | IT(RMS) | 0.8 | A | ||||
| ITSM | 2 | A | Non repetitive surge peak on-state current (full cycle, F=50Hz) | ||||
| Off-State Current | IDRM | mA | VD=VDRM, RGK=1k | - | 0.1 | ||
| IRRM | mA | VRRM, RGK=1k | - | 0.1 | |||
| dV/dt | 20 | V/s | VD=67%VDRM Tj=110C RGK=1K | ||||
| VTM | 1.6 | V | IT =0.8A |
2511211720_HXY-MOSFET-BT148W-600R-HXY_C52988532.pdf
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