Low Noise Silicon Germanium Bipolar RF Transistor Infineon BFP740FH6327 Suitable for RF Applications
Key Attributes
Model Number:
BFP740FH6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
1.2V
Current - Collector Cutoff:
40nA
Pd - Power Dissipation:
160mW
Transition Frequency(fT):
45GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
45mA
Collector - Emitter Voltage VCEO:
4V
Mfr. Part #:
BFP740FH6327
Package:
TSFP-4
Product Description
BFP740F Low Noise Silicon Germanium Bipolar RF Transistor
The BFP740F is a low noise silicon germanium bipolar RF transistor designed for high-frequency applications. It offers excellent performance characteristics suitable for various RF circuits.
Product Attributes
- Brand: Infineon Technologies
- Material: Silicon Germanium
- Origin: Germany
Technical Specifications
| Feature | Description | Value | Conditions | Frequency | Page |
| Product Type | Low Noise RF Transistor | BFP740F | |||
| Technology | Silicon Germanium Bipolar | ||||
| Package | TSFP-4-1 | 27 | |||
| Total Power Dissipation | Ptot | See Figure 4-1 | TS | 10 | |
| Collector Current | IC | Parameter | VCE = 3 V | 2 GHz | 19 |
| Collector Current | IC | Parameter | VCE = 3 V | 5.5 GHz | 20 |
| Collector Current | IC | Parameter | VCE = 3 V | 6 / 15 mA | 23, 24, 25 |
| Collector Emitter Voltage | VCE | Parameter | IB = Parameter in A | 16 | |
| Collector Emitter Voltage | VCE | Parameter | IC = 15 mA | f = Parameter in GHz | 22 |
| Collector Emitter Voltage | VCE | Parameter | IC = 15 mA | f = Parameter in GHz | 21 |
| Collector Emitter Voltage | VCE | Parameter | IC = 6 / 15 mA | f = Parameter in GHz | 23, 24 |
| Collector Emitter Voltage | VCE | Parameter | ZS = Zopt | f = Parameter in GHz | 25 |
| Collector Emitter Voltage | VCE | Parameter | ZS = 50 | f = Parameter in GHz | 25 |
| Base Emitter Forward Voltage | VBE | IC = f (VBE), VCE = 2 V | 17 | ||
| Base Emitter Forward Voltage | VBE | IB = f (VBE), VCE = 2 V | 17 | ||
| Base Emitter Reverse Voltage | VEB | IB = f (VEB), VCE = 2 V | 18 | ||
| DC Current Gain | hFE | f (IC) | VCE = 3 V | 16 | |
| Transition Frequency | fT | f (IC) | f = 2 GHz, VCE = Parameter in V | 2 GHz | 19 |
| 3rd Order Intercept Point (Output) | OIP3 | f (IC) | ZS = ZL = 50 , VCE = Parameter in V | MHz | 19 |
| 3rd Order Intercept Point (Output) | OIP3 | f (IC, VCE) | ZS = ZL = 50 | 5.5 GHz | 20 |
| Compression Point (Output) | OP1dB | f (IC, VCE) | ZS = ZL = 50 | 5.5 GHz | 20 |
| Collector Base Capacitance | CCB | f (VCB) | 1 MHz | 21 | |
| Gain | Gma, Gms, |S21|2 | f (f) | VCE = 3 V, IC = 15 mA | 21 | |
| Maximum Power Gain | Gmax | f (IC) | VCE = 3 V | Parameter in GHz | 22 |
| Maximum Power Gain | Gmax | f (VCE) | IC = 15 mA | Parameter in GHz | 22 |
| Input Matching | S11 | f (f) | VCE = 3 V, IC = 6 / 15 mA | 23 | |
| Source Impedance for Minimum Noise Figure | Zopt | f (f) | VCE = 3 V, IC = 6 / 15 mA | 23 | |
| Output Matching | S22 | f (f) | VCE = 3 V, IC = 6 / 15 mA | 24 | |
| Minimum Noise Figure | NFmin | f (f) | VCE = 3 V, IC = 6 / 15 mA, ZS = Zopt | 24 | |
| Minimum Noise Figure | NFmin | f (IC) | VCE = 3 V, ZS = Zopt | Parameter in GHz | 25 |
| Noise Figure (50 Ohm) | NF50 | f (IC) | VCE = 3 V, ZS = 50 | Parameter in GHz | 25 |
| Testing Circuit | Figure 5-1 | 12 | |||
| Marking | BFP740F: R7s | 27 |
2411220238_Infineon-BFP740FH6327_C152652.pdf
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