High gain and low noise Infineon BFP840FESDH6327XTSA1 transistor designed for 5 GHz band industrial

Key Attributes
Model Number: BFP840FESDH6327XTSA1
Product Custom Attributes
Current - Collector Cutoff:
400nA
Pd - Power Dissipation:
75mW
Transition Frequency(fT):
85GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
35mA
Collector - Emitter Voltage VCEO:
2.25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BFP840FESDH6327XTSA1
Package:
TSFP-4
Product Description

Product Overview

The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with integrated ESD protection, specifically designed for 5 GHz band applications. It offers a unique combination of high RF performance and robustness, featuring a maximum RF input power of 20 dBm and 1.5 kV HBM ESD hardness. With a high transition frequency (fT = 85 GHz), it delivers class-leading noise performance (NFmin = 0.75 dB at 5.5 GHz) and high gain (Gms = 23 dB at 5.5 GHz). This transistor is suitable for low voltage applications such as VCC = 1.2 V and 1.8 V, and is qualified for industrial applications.

Product Attributes

  • Brand: Infineon
  • Material: SiGe:C
  • Certifications: Qualified for industrial applications according to JEDEC47/20/22

Technical Specifications

ParameterSymbolValuesUnitNote or test condition
Collector emitter breakdown voltageV(BR)CEO2.25 - 2.6VIC = 1 mA, IB = 0, open base
Collector emitter leakage currentICES- - 400nAVCE = 1.5 V, VBE = 0, E-B short circuited
Collector base leakage currentICBO- - 400nAVCB = 1.5 V, IE = 0, open emitter
Emitter base leakage currentIEBO- - 10AVEB = 0.5 V, IC = 0, open collector
DC current gainhFE150 - 450VCE = 1.8 V, IC = 10 mA, pulse measured
Transition frequencyfT- 85 -GHzVCE = 1.8 V, IC = 25 mA, f = 2 GHz
Collector base capacitanceCCB- 38 -fFVCB = 1.8 V, VBE = 0, f = 1 MHz, emitter grounded
Collector emitter capacitanceCCE- 0.37 -pFVCE = 1.8 V, VBE = 0, f = 1 MHz, base grounded
Emitter base capacitanceCEB- 0.37 -VEB = 0.4 V, VCB = 0, f = 1 MHz, collector grounded
Maximum power gainGms23dB5.5 GHz, 1.8 V, 10 mA
Minimum noise figureNFmin0.75dB5.5 GHz, 1.8 V, 5 mA
3rd order intercept point at outputOIP322dBm5.5 GHz, 1.8 V, 10 mA
Maximum RF input powerPRFin- 20dBm
HBM ESD hardnessVESD-1.5 1.5kVHBM, all pins, acc. to JESD22-A114

2410121605_Infineon-BFP840FESDH6327XTSA1_C17500706.pdf

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