Plastic Encapsulated HXY MOSFET 2P4M Thyristor Suitable for Industrial Circuit Protection and Igniters
Key Attributes
Model Number:
2P4M
Product Custom Attributes
Holding Current (Ih):
3mA
Current - Gate Trigger(Igt):
90uA
Voltage - On State(Vtm):
1.6V
Current - On State(It(RMS)):
2A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
20A@50Hz
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
2P4M
Package:
TO-252-2L
Product Description
Product Overview
The 2P4M 2A SCR series offers a high dv/dt rate and strong resistance to electromagnetic interference. These thyristors are particularly suited for applications such as residual current circuit breakers, straight hair devices, and igniters.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Model: 2P4M
- Material: Plastic-Encapsulate
- Origin: Shenzhen, China
- Website: www.hxymos.com
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Electrical Characteristics | IGT | 90 | mA | VD=12V, RL =100 |
| VGT | 0.8 | V | IGT=100mA | |
| VGD | 0.2 | - | VD=VDRM Tj=110C | |
| IH | - | - | IT=50mA | |
| dV/dt | 20 | V/s | VD=2/3VDRM Tj=110C RGK=1K | |
| Absolute Maximum Ratings | Tstg | -40~150 | C | - |
| Tj | 125 | C | - | |
| VDRM/VRRM | 600 | V | Tj=25C | |
| IT(RMS) | 2 | A | - | |
| Non repetitive surge peak on-state current | ITSM | 20 | A | (full cycle, F=50Hz) |
| RMS on-state current | IT(RMS) | 2 | A | - |
| On-state voltage | VTM | 1.6 | V | ITM=2A |
| Off-state current | IDRM/IRRM | 0.1 | mA | VD=VDRM= VRRM RGK=1k |
2508121550_HXY-MOSFET-2P4M_C50275344.pdf
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