Plastic Encapsulate Thyristor Z0107MN5AA4 HXY MOSFET with 600 Volt Repetitive Peak Off State Voltage
Key Attributes
Model Number:
Z0107MN5AA4-HXY
Product Custom Attributes
Mfr. Part #:
Z0107MN5AA4-HXY
Package:
SOT-223
Product Description
Product Overview
The Z0107MN5AA4 thyristors offer a high dv/dt rate with strong resistance to electromagnetic interference. They are particularly recommended for applications such as residual current circuit breakers, straight hair appliances, and igniters.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Material: Plastic-Encapsulate Thyristors
Technical Specifications
| Symbol | Parameter | Conditions | Value | Unit |
| Absolute Maximum Ratings | ||||
| VDRM /VRRM | Repetitive peak off-state voltage | 600 | V | |
| IT(RMS) | RMS on-state current | 1.0 | A | |
| IGM | Peak Gate Current | 1 | A | |
| VGM | Peak gate voltage | 0.8 | V | |
| PGM | Peak gate power | 0.4 | W | |
| TJ | Junction Temperature | 125 | C | |
| PG(AV) | Average Gate Power Dissipation | 0.4 | W | |
| ITSM | Non-repetitive surge peak on-state current | t =20ms Tj =25C | 8 | A |
| I2t | For fusing | t =16.7ms Tj =25C | 1 | As |
| I2t | For fusing | t =10 ms | 2 | As |
| (dl/dt)c | Critical-rate of rise of commutation current | IG=2IGT t 100ns | 50 | A/s |
| dV/dt | Critical-rate of rise of commutating voltage | Gate open Tj =125C | 20 | V/s |
| VDRM/VRRM | Repetitive Peak Off-State Voltage | 600 | V | |
| IT(RMS) | RMS on-state current | 1.0 | A | |
| Tstg | Storage Temperature | -40 ~ 150 | C | |
| Electrical Characteristics (Tj=25C unless otherwise specified) | ||||
| IDRM,IRRM | Repetitive Peak Off-State Current / Repetitive Peak Reverse Current | VDRM=VRRM Tj =125C | 5 | mA |
| IDRM,IRRM | Repetitive Peak Off-State Current / Repetitive Peak Reverse Current | VDRM=VRRM Tj =25C | 1 | mA |
| VGD | Gate non-trigger voltage | VD=1/2VDRM | 0.2 | V |
| VTM | On-state voltage | IT=1A,tp=380s | 1.65 | V |
| IGT | Gate trigger current | T2(+), G(+) VD=12V,RL=100 | 0.8 | mA |
| IGT | Gate trigger current | T2(+), G(-) VD=12V,RL=100 | 0.8 | mA |
| IGT | Gate trigger current | T2(-), G(-) VD=12V,RL=100 | 0.8 | mA |
| VGT | Gate trigger voltage | T2(+), G(+) VD=12V RL=100 | 0.8 | V |
| VGT | Gate trigger voltage | T2(-), G(+) VD=12V RL=100 | 0.8 | V |
| IH | Holding current | VD=12V,IGT=100mA | 30 | mA |
| (dV/dt)c | Critical-rate of rise of commutation voltage | VDM=67%VDRM Gate open Tj =125C | 20 | V/s |
| tgt | Turn-on time | ITM =16A ,VDM=VDRM(MA) IG =0.1A,dlG/dt=5A/uS | 2 | s |
| (dl/dt)c | Critical-rate of rise of commutation current | VDM=400V, Tj =125C (dl/dt)c=5.4A/ms Gate open | 5.4 | A/ms |
2511211720_HXY-MOSFET-Z0107MN5AA4-HXY_C52988587.pdf
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