switching component HXY MOSFET Z0107NN5AA4-HXY thyristor with 2 amp second fusing current and strong EMI resistance
Key Attributes
Model Number:
Z0107NN5AA4-HXY
Product Custom Attributes
Mfr. Part #:
Z0107NN5AA4-HXY
Package:
SOT-223
Product Description
Product Overview
The Z0107NN5AA4 thyristor offers a high dv/dt rate and strong resistance to electromagnetic interference, making it ideal for applications such as residual current circuit breakers, straight hair appliances, and igniters.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Material: Plastic-Encapsulate
- Model: Z0107NN5AA4
Technical Specifications
| Symbol | Parameter | Conditions | Value | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| VDRM /VRRM | repetitive peak off-state voltage | 800 | V | |
| IT(RMS) | RMS on-state current | 1.0 | A | |
| ITSM | Non repetitive surge peak on-state current | t =20ms Tj =25C | 8 | A |
| I2t | for fusing | t =16.7ms Tj =25C | 2 | A s |
| (dl/dt)c | Critical-rate of rise of commutation current | IG=2IGT t 100ns | 100 | A/ us |
| PG(AV) | Average Gate Power Dissipation | 0.4 | W | |
| Tj | Junction Temperature | 125 | C | |
| Tstg | Storage Temperature | -40 ~ 150 | C | |
| Electrical Characteristics | ||||
| IDRM,IRRM | Repetitive Peak Off-State Current, Repetitive Peak Reverse Current | VDRM=VRRM Tj =125C | 50 | mA |
| IDRM,IRRM | Repetitive Peak Off-State Current, Repetitive Peak Reverse Current | VDRM=VRRM Tj =25C | 1 | mA |
| VDRM/VRRM | repetitive peak off-state voltage | 800 | V | |
| IGT | Gate trigger current | VD=12V,RL=100 T =125 j C | 0.8 | mA |
| VGT | Gate trigger voltage | VD=12V,RL=100 T =125 j C | 0.8 | V |
| IH | Holding current | VD=12V,IGT=100mA T =125 j C | 30 | mA |
| VTM | On-state voltage | IT=1A,tp=380s T =125 j C | 1.65 | V |
| dV/dt | Critical-rate of rise of commutation voltage | Gate open VDM=400V, Tj =125C (dl/dt)c=5.4A/ms | 20 | V/us |
| tgt | Turn-on time | ITM =16A ,VDM=VDRM(MA) IG =0.1A,dlG/dt=5A/uS | 2 | us |
2511211720_HXY-MOSFET-Z0107NN5AA4-HXY_C52988584.pdf
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