Glass passivated triacs HXY MOSFET BTB08-800 for motor control and industrial lighting applications
Key Attributes
Model Number:
BTB08-800
Product Custom Attributes
Mfr. Part #:
BTB08-800
Package:
TO-252-2L
Product Description
Product Overview
Glass passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating, and static switching.
Product Attributes
- Brand: HUAXUANYANG (HXY)
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Material: Plastic-Encapsulate
- Package: TO-252-2L
- Certifications: None specified
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| repetitive peak off-state voltage | VDRM /VRRM | 800 | V | Tj =25C |
| repetitive peak off-state voltage | VDRM /VRRM | 800 | V | Tj =125C |
| Peak Gate Current | IGM | 5 | A | Tj =125C |
| Peak gate voltage | VGM | 4 | V | Tj =125C |
| Peak gate power | PGM | 36 | W | Tj =125C |
| Junction Temperature | Tj | -40 ~ 125 | C | |
| Average Gate Power Dissipation | G(AV) | 0.5 | W | |
| RMS on-state current | IT(RMS) | 8 | A | TO-252-2L |
| Non repetitive surge peak on-state current | ITSM | 80 | A | t =16.7ms Tj =25C |
| I t for fusing | I2t | 30 | As | t =10 ms Tj =25C |
| Critical-rate of rise of commutation current | dI/dt | 50 | A/s | IG=2IGT tr100ns F=120Hz |
| Storage Temperature | Tstg | -40 ~ 150 | C | |
| Repetitive Peak Off-State Current | IDRM,IRRM | 0.2 | mA | VDRM=VRRM T =25 j C |
| Repetitive Peak Off-State Current | IDRM,IRRM | 1 | mA | VDRM=VRRM T =125 j C |
| Gate non-trigger voltage | VGD | 5 | V | VD= 1/2V DRM |
| On-state voltage | VTM | 1.65 | V | IT= 6A,tp=380us |
| Gate trigger current | IGT | 0.8 | A | T2(+), G(+) VD=12V RL=100 I T2(+), G(+) |
| Gate trigger current | IGT | 2 | A | T2(+), G(-) VD=12V RL=100 I T2(+), G(-) |
| Gate trigger current | IGT | 2 | A | T2(-), G(-) VD=12V RL=100 I T2(-), G(-) |
| Gate trigger current | IGT | 2 | A | T2(-), G(+) VD=12V RL=100 I T2(-), G(+) |
| Gate trigger voltage | VGT | 0.8 | V | T2(+), G(+) VD=12V RL=100 I T2(+), G(+) |
| Gate trigger voltage | VGT | 0.8 | V | T2(+), G(-) VD=12V RL=100 I T2(+), G(-) |
| Gate trigger voltage | VGT | 0.8 | V | T2(-), G(-) VD=12V RL=100 I T2(-), G(-) |
| Gate trigger voltage | VGT | 0.8 | V | T2(-), G(+) VD=12V RL=100 I T2(-), G(+) |
| Holding current | IH | 30 | mA | VD=12V ,IGT=100mA |
| Rate of change of commutating voltage | dV/dt | 20 | V/s | Tj =125C |
| Turn-on time | tgt | 2 | s | ITM =16A ,VDM=V DRM VDM=67%V DRM(MAX) |
| Critical-rate of rise of commutation voltage (dl/dt)c | (dl/dt)c | 5.4 | A/ms | Gate open |
| Critical-rate of rise of commutation voltage (dl/dt)c | (dl/dt)c | 400V | V/us | Gate open |
2508121550_HXY-MOSFET-BTB08-800_C50275363.pdf
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