SiGe C Technology RF Bipolar Transistor Infineon BFP640ESDH6327 for Industrial Wireless Applications
Key Attributes
Model Number:
BFP640ESDH6327
Product Custom Attributes
Current - Collector Cutoff:
500nA
Pd - Power Dissipation:
-
Transition Frequency(fT):
45GHz
Type:
NPN
Current - Collector(Ic):
-
Collector - Emitter Voltage VCEO:
4.1V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BFP640ESDH6327
Package:
SOT-343-4
Product Description
Product Overview
The BFP640ESD is a robust silicon NPN RF bipolar transistor from Infineon's sixth generation transistor family, utilizing SiGe:C technology. It offers high RF gain, low noise figure, and excellent ESD robustness, making it suitable for a wide range of wireless applications. This device provides a cost-competitive solution without compromising ease of use.
Product Attributes
- Brand: Infineon
- Material: SiGe:C technology
- Certifications: Qualified for industrial applications according to JEDEC47/20/22
- ESD Sensitivity: Yes, observe handling precautions
Technical Specifications
| Parameter | Symbol | Values | Unit | Note or test condition |
| Absolute Maximum Ratings | ||||
| Collector emitter voltage | VCEO | 4.1 | V | Open base, TA = 25 C |
| Collector emitter voltage | VCES | 3.6 | V | E-B short circuited, TA = 25 C |
| Collector base voltage | VCBO | 4.8 | V | Open emitter, TA = 25 C |
| Base current | IB | -10 to 6 | mA | TA = 25 C |
| Collector current | IC | 50 | mA | TA = 25 C |
| RF input power | PRFin | 21 | dBm | TA = 25 C |
| ESD stress pulse | VESD | -2 to 2 | kV | HBM, all pins, acc. to JESD22-A114 |
| Total power dissipation | Ptot | 200 | mW | TS 88 C |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TStg | -55 to 150 | C | |
| Thermal Characteristics | ||||
| Junction - soldering point thermal resistance | RthJS | 310 | K/W | Typ., |
| DC Characteristics | ||||
| Collector emitter breakdown voltage | V(BR)CEO | 4.1 to 4.7 | V | IC = 1 mA, IB = 0, open base |
| Collector emitter leakage current | ICES | 500 | nA | VCE = 2 V, VBE = 0, E-B short circuited (max value) |
| Collector base leakage current | ICBO | 500 | nA | VCB = 2 V, IE = 0, open emitter (max value) |
| Emitter base leakage current | IEBO | 10 | A | VEB = 0.5 V, IC = 0, open collector (max value) |
| DC current gain | hFE | 110 to 270 | VCE = 3 V, IC = 30 mA, pulse measured | |
| General AC Characteristics | ||||
| Transition frequency | fT | 45 | GHz | VCE = 3 V, IC = 30 mA, f = 1 GHz |
| Collector base capacitance | CCB | 0.08 | pF | VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded |
| Collector emitter capacitance | CCE | 0.4 | pF | VCE = 3 V, VBE = 0, f = 1 MHz, base grounded |
| Emitter base capacitance | CEB | 0.7 | pF | VEB = 0.4 V, VCB = 0, f = 1 MHz, collector grounded |
| Frequency Dependent AC Characteristics (VCE = 3 V) | ||||
| Frequency | 150 MHz | |||
| Maximum power gain | Gms | 39.5 | dB | IC = 30 mA |
| Transducer gain | |S21|2 | 35 | dB | IC = 30 mA |
| Minimum noise figure | NFmin | 0.6 | dB | IC = 6 mA |
| Associated gain | Gass | 30 | dB | IC = 6 mA |
| 3rd order intercept point at output | OIP3 | 25 | dBm | IC = 30 mA, ZS = ZL = 50 |
| 1 dB gain compression point at output | OP1dB | 11 | dBm | IC = 30 mA, ZS = ZL = 50 |
| Frequency | 450 MHz | |||
| Maximum power gain | Gms | 34.5 | dB | IC = 30 mA |
| Transducer gain | |S21|2 | 32 | dB | IC = 30 mA |
| Minimum noise figure | NFmin | 0.6 | dB | IC = 6 mA |
| Associated gain | Gass | 28.5 | dB | IC = 6 mA |
| 3rd order intercept point at output | OIP3 | 25 | dBm | IC = 30 mA, ZS = ZL = 50 |
| 1 dB gain compression point at output | OP1dB | 11 | dBm | IC = 30 mA, ZS = ZL = 50 |
| Frequency | 900 MHz | |||
| Maximum power gain | Gms | 30.5 | dB | IC = 30 mA |
| Transducer gain | |S21|2 | 28 | dB | IC = 30 mA |
| Minimum noise figure | NFmin | 0.6 | dB | IC = 6 mA |
| Associated gain | Gass | 26 | dB | IC = 6 mA |
| 3rd order intercept point at output | OIP3 | 26 | dBm | IC = 30 mA, ZS = ZL = 50 |
| 1 dB gain compression point at output | OP1dB | 11.5 | dBm | IC = 30 mA, ZS = ZL = 50 |
| Frequency | 1.5 GHz | |||
| Maximum power gain | Gms | 26.5 | dB | IC = 30 mA |
| Transducer gain | |S21|2 | 24 | dB | IC = 30 mA |
| Minimum noise figure | NFmin | 0.65 | dB | IC = 6 mA |
| Associated gain | Gass | 23.5 | dB | IC = 6 mA |
| 3rd order intercept point at output | OIP3 | 26.5 | dBm | IC = 30 mA, ZS = ZL = 50 |
| 1 dB gain compression point at output | OP1dB | 12 | dBm | IC = 30 mA, ZS = ZL = 50 |
| Frequency | 1.9 GHz | |||
| Maximum power gain | Gms | 25 | dB | IC = 30 mA |
| Transducer gain | |S21|2 | 22 | dB | IC = 30 mA |
| Minimum noise figure | NFmin | 0.65 | dB | IC = 6 mA |
| Associated gain | Gass | 22 | dB | IC = 6 mA |
| 3rd order intercept point at output | OIP3 | 27 | dBm | IC = 30 mA, ZS = ZL = 50 |
| 1 dB gain compression point at output | OP1dB | 12 | dBm | IC = 30 mA, ZS = ZL = 50 |
| Frequency | 2.4 GHz | |||
| Maximum power gain | Gms | 23 | dB | IC = 30 mA |
| Transducer gain | |S21|2 | 20 | dB | IC = 30 mA |
| Minimum noise figure | NFmin | 0.7 | dB | IC = 6 mA |
| Associated gain | Gass | 20 | dB | IC = 6 mA |
| 3rd order intercept point at output | OIP3 | dBm | IC = 30 mA, ZS = ZL = 50 | |
| 1 dB gain compression point at output | OP1dB | dBm | IC = 30 mA, ZS = ZL = 50 | |
| Device Information | ||||
| Product name / Ordering code | BFP640ESD / BFP640ESDH6327XTSA1 | |||
| Package | SOT343 | |||
| Pin configuration | 1 = B, 2 = E, 3 = C, 4 = E | |||
| Marking | T4s | |||
| Pieces / Reel | 3000 | |||
2409291833_Infineon-BFP640ESDH6327_C672126.pdf
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