Jilin Sino Microelectronics JCS2N60MFB 126F MOSFET avalanche tested for switching power supplies and UPS
Key Attributes
Model Number:
JCS2N60MFB-126F
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
1.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
2.1pF
Number:
1 N-channel
Output Capacitance(Coss):
20pF
Input Capacitance(Ciss):
230pF
Pd - Power Dissipation:
44W
Gate Charge(Qg):
6nC@10V
Mfr. Part #:
JCS2N60MFB-126F
Package:
TO-126
Product Description
Product Overview
The JCS2N60M(F)B is an N-channel enhancement mode MOSFET designed for high-efficiency switching power supplies, electronic lamp ballasts, and UPS applications. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability, making it a RoHS compliant product.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS compliant
- Material: Not specified
- Color: Not specified
- Origin: China
Technical Specifications
| Order Code | Marking | Package | Halogen Free | Main Characteristics | Applications | Features |
| JCS2N60MB-O-F-N-B | JCS2N60MB | TO-126 | NO | ID: 2.0 A, VDSS: 600 V, RDS(on)(VGS=10V): 5.0, Qg: 6.0 nC | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS | Low gate charge, Low Crss (typical 2.1pF), Fast switching, 100% avalanche tested, Improved dv/dt capability, RoHS product |
| JCS2N60MFB-O-F-N-B | JCS2N60MFB | TO-126F | NO | ID: 2.0 A, VDSS: 600 V, RDS(on)(VGS=10V): 5.0, Qg: 6.0 nC | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS | Low gate charge, Low Crss (typical 2.1pF), Fast switching, 100% avalanche tested, Improved dv/dt capability, RoHS product |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Off-Characteristics | ||||||
| Drain-Source Voltage | VDSS | ID = 250A, VGS = 0V | 600 | - | - | V |
| Breakdown Voltage Temperature Coefficient | VDSS/TJ | ID = 1mA, referenced to 25 | - | 0.6 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS = 600V, VGS = 0V | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS = 480V, VGS = 0V, TJ = 125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS = 0V, VGS = -30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 1A | - | 3.9 | 5.0 | |
| Forward Transconductance | gfs | VDS = 40V, ID = 1.0A (note 4) | - | 2.05 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | - | - | 190 | 230 | pF |
| Output capacitance | Coss | - | - | 15 | 20 | pF |
| Reverse transfer capacitance | Crss | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 1.8 | 2.1 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=300V,ID=2.0A,RG=25 (note 4, 5) | - | 7 | 23 | ns |
| Turn-On rise time | tr | - | 23 | 45 | ns | |
| Turn-Off delay time | td(off) | - | 22 | 43 | ns | |
| Turn-Off Fall time | tf | - | 24 | 46 | ns | |
| Total Gate Charge | Qg | VDS = 480V, ID = 2.0A, VGS = 10V (note 4, 5) | - | 5.3 | 6 | nC |
| Gate-Source charge | Qgs | - | 1.8 | - | nC | |
| Gate-Drain charge | Qgd | - | 1.8 | - | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | - | - | 1.9 | A |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | - | 6.0 | A |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=2.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | - | - | 230 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=2.0A, dIF/dt=100A/s (note 4) | - | 1.0 | - | C |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | - | - | - | 600 | V |
| Drain Current-continuous | ID | TC=25 | - | 1.9 | - | A |
| Drain Current-continuous | ID | TC=100 | - | 1.1 | - | A |
| Drain Current pulse (note 1) | IDM | - | - | - | 6.0 | A |
| Gate-Source Voltage | VGSS | - | - | - | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | - | - | - | 120 | mJ |
| Avalanche Current (note 1) | IAR | - | - | - | 1.9 | A |
| Repetitive Avalanche Current (note 1) | EAR | - | - | - | 4.4 | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | - | - | - | 4.5 | V/ns |
| Power Dissipation | PD | TC=25 | - | - | 44 | W |
| Power Dissipation -Derate above 25 | - | - | - | - | 0.35 | W/ |
| Operating and Storage Temperature Range | TJ, TBSTG | - | -55 | - | +150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | - | - | - | 300 | |
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction to Case | Rth(j-c) | - | - | - | 2.87 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | - | - | - | 110 | /W |
2411201840_Jilin-Sino-Microelectronics-JCS2N60MFB-126F_C272568.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
