NPN silicon germanium RF driver amplifier Infineon BFQ790H6327XTSA1 designed for broadcasting and test equipment
Key Attributes
Model Number:
BFQ790H6327XTSA1
Product Custom Attributes
Pd - Power Dissipation:
1.5W
Transition Frequency(fT):
1.85GHz
Type:
NPN
Current - Collector(Ic):
300mA
Collector - Emitter Voltage VCEO:
6.1V
Mfr. Part #:
BFQ790H6327XTSA1
Package:
SOT-89
Product Description
Product Overview
The BFQ790 is a high-linearity, high-gain driver amplifier designed for RF applications. Built on NPN silicon germanium technology, it offers excellent performance characteristics suitable for commercial and industrial wireless infrastructure, ISM band amplifiers, automated test equipment, and broadcasting systems.
Product Attributes
- Brand: Infineon
- Origin: Not specified
- Material: NPN Silicon Germanium
- Color: Not specified
- Certifications: Qualified for industrial applications according to JEDEC47/20/22.
Technical Specifications
| Parameter | Symbol | Values | Unit | Note or test condition | ||||
| Absolute Maximum Ratings (TA = 25 C unless otherwise specified) | ||||||||
| Collector emitter voltage | VCE | 5.1 | V | TA = -40 C | ||||
| Collector emitter voltage | VCE | 6.1 | V | TA = 25 C | ||||
| Collector base voltage | VCB | 18 | V | - | ||||
| Instantaneous total base emitter reverse voltage | vBE | -2 | V | DC + RF swing | ||||
| Instantaneous total collector current | iC | 600 | mA | DC + RF swing | ||||
| DC collector current | IC | 300 | mA | - | ||||
| DC base current | IB | 10 | mA | - | ||||
| RF input power | PRFin | 18 | dBm | In- and output matched | ||||
| Mismatch at output VSWR | VSWR | 10:1 | - | In compression, over all phase angles | ||||
| ESD stress pulse | VESD | 500 | V | HBM, all pins, acc. to ANSI / ESDA / JEDEC JS-001-2012 | ||||
| Dissipated power | Pdiss | 1500 | mW | TS 112.5 C, regard derating curve in Figure 1. | ||||
| Junction temperature | TJ | 150 | C | - | ||||
| Operating case temperature | TA | 105 | C | -40 to 105 C | ||||
| Storage temperature | TStg | 150 | C | -55 to 150 C | ||||
| Recommended Operating Conditions | ||||||||
| Operating mode | Ambient temperature TA [C] | Collector current IC [mA] | DC power PDC [mW] | RF output power PRFout [mW] (dBm) | Efficiency [%] | Dissipated power Pdiss [mW] | Thermal resistance RthSA [K/W] | Junction temperature TJ [C] |
| Compression | 55 | 250 | 1250 | 500 (27) | 40 | 750 | 45 | 110 |
| Final stage | 55 | 200 | 1000 | 250 (24) | 25 | 750 | 45 | 110 |
| High TA | 85 | 120 | 600 | 50 (17) | 8.5 | 550 | 20 | 110 |
| Maximum TA | 105 | 50 | 250 | 100 (20) | 40 | 150 | 30 | 110 |
| Linear | 55 | 150 | 750 | 50 (17) | 7 | 700 | 50 | 110 |
| Very linear | 55 | 250 | 1250 | 50 (17) | 4 | 1200 | 20 | 110 |
| Thermal Characteristics | ||||||||
| Junction - soldering point | RthJS | 25 | K/W | Typ. | ||||
| DC Characteristics (TA = 25 C) | ||||||||
| Collector emitter breakdown voltage | V(BR)CEO | 6.1 | V | IC = 1 mA, open base | ||||
| Collector emitter breakdown voltage | V(BR)CEO | 6.7 | V | IC = 1 mA, open base | ||||
| Collector emitter leakage current | ICES | 0.1 | A | VCE = 8 V, VBE = 0 V | ||||
| Collector emitter leakage current | ICES | 1 | A | VCE = 18 V, VBE = 0 V, E-B short circuited | ||||
| Collector emitter leakage current | ICES | 40 | nA | VCE = 8 V, VBE = 0 V | ||||
| Collector emitter leakage current | ICES | 40 | nA | VCE = 18 V, VBE = 0 V, E-B short circuited | ||||
| Collector base leakage current | ICBO | 1 | nA | VCB = 8 V, IE = 0, open emitter | ||||
| Collector base leakage current | ICBO | 40 | nA | VCB = 8 V, IE = 0, open emitter | ||||
| Emitter base leakage current | IEBO | 1 | A | VEB = 0.5 V, IC = 0, open collector | ||||
| Emitter base leakage current | IEBO | 40 | A | VEB = 0.5 V, IC = 0, open collector | ||||
| DC current gain | hFE | 60 | - | VCE = 5 V, IC = 250 mA, pulse measured | ||||
| DC current gain | hFE | 120 | - | VCE = 5 V, IC = 250 mA, pulse measured | ||||
| DC current gain | hFE | 180 | - | VCE = 5 V, IC = 250 mA, pulse measured | ||||
| General AC Characteristics (TA = 25 C) | ||||||||
| Transition frequency | fT | 20 | GHz | VCE = 5 V, IC = 250 mA, f = 0.5 GHz | ||||
| Collector base capacitance | CCB | 1.1 | pF | VCB = 5 V, VBE = 0 V, f = 1 MHz, emitter grounded | ||||
| Collector emitter capacitance | CCE | 2.2 | pF | VCE = 5 V, VBE = 0 V, f = 1 MHz, base grounded | ||||
| Emitter base capacitance | CEB | 9.4 | pF | VEB = 0.5 V, VCB = 0 V, f = 1 MHz, collector grounded | ||||
2411071348_Infineon-BFQ790H6327XTSA1_C17526691.pdf
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