NPN Silicon Darlington Transistor Infineon BCV47E6327HTSA1 with SOT23 Package and High Current Gain
Key Attributes
Model Number:
BCV47E6327HTSA1
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
360mW
DC Current Gain:
10000
Transition Frequency(fT):
170MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
60V
Mfr. Part #:
BCV47E6327HTSA1
Package:
SOT-23
Product Description
Product Overview
The BCV27 and BCV47 are NPN Silicon Darlington Transistors designed for general AF applications. They offer high collector current, high current gain, and are Pb-free (RoHS compliant) and qualified according to AEC Q101. Complementary PNP types are BCV26 and BCV46.
Product Attributes
- Brand: Infineon Technologies
- Material: Silicon
- Certifications: AEC Q101
- Package: SOT23
- Type Marking: BCV27 (FFs), BCV47 (FGs)
- RoHS Compliant: Yes
Technical Specifications
| Parameter | Symbol | BCV27 | BCV47 | Unit |
| Maximum Ratings | ||||
| Collector-emitter voltage | VCEO | 30 | 60 | V |
| Collector-base voltage | VCBO | 40 | 80 | V |
| Emitter-base voltage | VEBO | 10 | V | |
| Collector current | IC | 500 | mA | |
| Peak collector current, tp 10 ms | ICM | 800 | mA | |
| Base current | IB | 100 | mA | |
| Peak base current | IBM | 200 | mA | |
| Total power dissipation - TS 74 C | Ptot | 360 | mW | |
| Junction temperature | Tj | 150 | C | |
| Storage temperature | Tstg | -65 ... 150 | C | |
| Thermal Resistance | ||||
| Junction - soldering point | RthJS | 210 | K/W | |
| DC Characteristics (at TA = 25C, unless otherwise specified) | ||||
| Collector-emitter breakdown voltage (IC = 10 mA, IB = 0) | V(BR)CEO | 30 | 60 | V |
| Collector-base breakdown voltage (IC = 100 A, IE = 0) | V(BR)CBO | 40 | 80 | V |
| Emitter-base breakdown voltage (IE = 10 A, IC = 0) | V(BR)EBO | 10 | V | |
| Collector-base cutoff current (VCB = 30 V, IE = 0) | ICBO | 0.1 | 0.1 | A |
| Collector-base cutoff current (VCB = 60 V, IE = 0) | ICBO | A | ||
| Collector-base cutoff current (VCB = 30 V, IE = 0, TA = 150 C) | ICBO | 10 | 10 | A |
| Collector-base cutoff current (VCB = 60 V, IE = 0, TA = 150 C) | ICBO | A | ||
| Emitter-base cutoff current (VEB = 4 V, IC = 0) | IEBO | 100 | nA | |
| DC current gain (IC = 100 A, VCE = 1 V) | hFE | 4000 | 2000 | - |
| DC current gain (IC = 10 mA, VCE = 5 V) | hFE | 10000 | 4000 | - |
| DC current gain (IC = 100 mA, VCE = 5 V) | hFE | 20000 | 10000 | - |
| DC current gain (IC = 0.5 A, VCE = 5 V) | hFE | 4000 | 2000 | - |
| Collector-emitter saturation voltage (IC = 100 mA, IB = 0.1 mA) | VCEsat | 1 | V | |
| Base emitter saturation voltage (IC = 100 mA, IB = 0.1 mA) | VBEsat | 1.5 | V | |
| AC Characteristics (at TA = 25C, unless otherwise specified) | ||||
| Transition frequency (IC = 50 mA, VCE = 5 V, f = 100 MHz) | fT | 170 | MHz | |
| Collector-base capacitance (VCB = 10 V, f = 1 MHz) | Ccb | 3 | pF | |
2411220125_Infineon-BCV47E6327HTSA1_C7085658.pdf
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