N channel MOSFET Jilin Sino Microelectronics JCS6N70VC IPAK for high frequency switching applications
Key Attributes
Model Number:
JCS6N70VC-IPAK
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.6Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Output Capacitance(Coss):
170pF
Input Capacitance(Ciss):
1.89nF
Pd - Power Dissipation:
120W
Gate Charge(Qg):
41nC@10V
Mfr. Part #:
JCS6N70VC-IPAK
Package:
TO-251
Product Description
Product Overview
The JCS6N70C is an N-channel MOSFET designed for high-frequency switching applications. It features low gate charge, fast switching speeds, improved dv/dt capability, and is 100% avalanche tested. Ideal for use in high frequency switching mode power supplies, electronic ballasts, and UPS systems.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Model | Package | Main Characteristics | Order Code | Marking |
| JCS6N70C | TO-220MF | ID: 6.0 A, VDSS: 700 V, Rds(on)-max (@Vgs=10V): 1.6 , Qg-typ: 31 nC | JCS6N70FC-F-B / JCS6N70FC-F-BR | JCS6N70F |
| JCS6N70C | TO-220MF-K2 | ID: 6.0 A, VDSS: 700 V, Rds(on)-max (@Vgs=10V): 1.6 , Qg-typ: 31 nC | JCS6N70FC-F2-B / JCS6N70FC-F2-BR | JCS6N70F |
| JCS6N70C | TO-263 | ID: 6.0 A, VDSS: 700 V, Rds(on)-max (@Vgs=10V): 1.6 , Qg-typ: 31 nC | JCS6N70SC-S-B / JCS6N70SC-S-BR / JCS6N70SC-S-A / JCS6N70SC-S-AR | JCS6N70S |
| JCS6N70C | TO-220C | ID: 6.0 A, VDSS: 700 V, Rds(on)-max (@Vgs=10V): 1.6 , Qg-typ: 31 nC | JCS6N70CC-C-B / JCS6N70CC-C-BR | JCS6N70C |
| JCS6N70C | TO-262 | ID: 6.0 A, VDSS: 700 V, Rds(on)-max (@Vgs=10V): 1.6 , Qg-typ: 31 nC | JCS6N70BC-B-B / JCS6N70BC-B-BR / JCS6N70BC-B2-B / JCS6N70BC-B2-BR | JCS6N70B |
| JCS6N70C | DPAK | ID: 6.0 A, VDSS: 700 V, Rds(on)-max (@Vgs=10V): 1.6 , Qg-typ: 31 nC | JCS6N70RC-R-B / JCS6N70RC-R-BR / JCS6N70RC-R-A / JCS6N70RC-R-AR | JCS6N70R |
| JCS6N70C | TO-126P | ID: 6.0 A, VDSS: 700 V, Rds(on)-max (@Vgs=10V): 1.6 , Qg-typ: 31 nC | JCS6N70MPC-MP-B / JCS6N70MPC-MP-BR | JCS6N70MP |
| JCS6N70C | IPAK | ID: 6.0 A, VDSS: 700 V, Rds(on)-max (@Vgs=10V): 1.6 , Qg-typ: 31 nC | JCS6N70VC-V-B / JCS6N70VC-V-BR | JCS6N70V |
| JCS6N70C | IPAK-S2 | ID: 6.0 A, VDSS: 700 V, Rds(on)-max (@Vgs=10V): 1.6 , Qg-typ: 31 nC | JCS6N70VC-V2-B / JCS6N70VC-V2-BR | JCS6N70V |
| JCS6N70C | IPAK-WS2 | ID: 6.0 A, VDSS: 700 V, Rds(on)-max (@Vgs=10V): 1.6 , Qg-typ: 31 nC | JCS6N70VC-V5-B / JCS6N70VC-V5-BR | JCS6N70V |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | 700 | V |
| Continuous Drain Current (TC=25) | ID | 6.0* | A |
| Continuous Drain Current (TC=100) | ID | 3.9* | A |
| Pulsed Drain Current (note 1) | IDM | 24* | A |
| Gate-Source Voltage | VGSS | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 270 | mJ |
| Avalanche Current (note 1) | IAR | 6.0 | A |
| Repetitive Avalanche Energy (note 1) | EAR | 11.8 | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 5.5 | V/ns |
| Power Dissipation (TC=25) | PD | 120 | W |
| Derate above 25 | 1.04 | W/ | |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 |
Electrical Characteristics
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Off-Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 700 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.73 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=700V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=560V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=3.0A | - | 1.26 | 1.6 | |
| Forward Transconductance | gfs | VDS = 40V, ID=6.0Anote 4 | - | 4.9 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 1620 | 1890 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 125 | 170 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 14 | 20 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=350V,ID=6A,RG=25 note 45 | - | 11 | 31 | ns |
| Turn-On rise time | tr | VDD=350V,ID=6A,RG=25 note 45 | - | 35 | 80 | ns |
| Turn-Off delay time | td(off) | VDD=350V,ID=6A,RG=25 note 45 | - | 46 | 95 | ns |
| Turn-Off Fall time | tf | VDD=350V,ID=6A,RG=25 note 45 | - | 40 | 92 | ns |
| Total Gate Charge | Qg | VDS =560V , ID=6A VGS =10V note 45 | - | 31 | 41 | nC |
| Gate-Source charge | Qgs | VDS =560V , ID=6A VGS =10V note 45 | - | 6 | - | nC |
| Gate-Drain charge | Qgd | VDS =560V , ID=6A VGS =10V note 45 | - | 15 | - | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | - | - | 6 | A |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | - | 24 | A |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=6.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=6.0A dIF/dt=100A/s (note 4) | - | 345 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=6.0A dIF/dt=100A/s (note 4) | - | 3.2 | - | C |
Thermal Characteristics
| Parameter | Symbol | Max | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 1.04 / 3.2 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | /W |
2409272332_Jilin-Sino-Microelectronics-JCS6N70VC-IPAK_C272540.pdf
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